A Technique for Predicting Large-Signal Performance of a GaAs MESFET

Willing, H.A.; Rauscher, C.; Santis, P. De

doi:10.1109/tmtt.1978.1129538

Cited by 107 publications

(2 citation statements)

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“…Since under illuminated condition the effective gatesource voltage is increased with the incident illumination level due to the increase in the developed photo voltage across the Schottky junction, the characteristics presented in Figs. 3 and 5 qualitatively agree with the experimental observations [15,22]. The results presented in Fig.…”

Section: Resultssupporting

confidence: 89%

“…5 may be shown indirectly from the experimental result of [15]. It has been experimentally observed that the gate-drain capacitance is increased with the gate-source voltage in the linear region whereas the same is decreased in the saturation region of the device operation under dark condition [15,22]. Since under illuminated condition the effective gatesource voltage is increased with the incident illumination level due to the increase in the developed photo voltage across the Schottky junction, the characteristics presented in Figs.…”

Section: Resultsmentioning

confidence: 92%

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A photo‐dependent capacitance model of GaAs MESFET's

Murty

Jit

2006

Physica Status Solidi (a)

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A new and simple analytical model for determining the photo-effects on the gate -source and gate -drain capacitances of GaAs MESFET's has been presented for both the linear and saturation regions. A new model for the photovoltage developed across the Schottky junction due to the illumination has been used to investigate the photo-dependent characteristics of the above capacitances. It has been observed that the gate -source and gate -drain capacitances are increased with the increase in the incident illumination level to the device in its linear region of operation whereas in the saturation region, the gate -source capacitance is increased but the gate -drain capacitance is observed to be decreased with the increase in the incident optical intensity level.

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Section: Resultssupporting

confidence: 89%