A system-level method for hardening phase-locked loop to single-event effects

Liang, Bin; Xu, Xinyu; Yuan, Hengzhou; Chen, Jianjun; Luo, Dong; Chi, Yaqing; Sun, H.

doi:10.1088/2053-1591/ac8f87

Cited by 5 publications

(4 citation statements)

References 22 publications

(24 reference statements)

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“…It simplifes the design of the checker processor by incorporating shared branch prediction, instruction prefetching, and other structures. In addition to redundancy computing methods, there is another class of system-level reinforcement methods known as online supervision methods, including control fow detection and watchdogs [67].…”

Section: System-levelmentioning

confidence: 99%

Overview on Radiation Damage Effects and Protection Techniques in Microelectronic Devices

Ren,

Zhu,

et al. 2024

Science and Technology of Nuclear Installations

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With the rapid advancement of information technology, microelectronic devices have found widespread applications in critical sectors such as nuclear power plants, aerospace equipment, and satellites. However, these devices are frequently exposed to diverse radiation environments, presenting significant challenges in mitigating radiation-induced damage. Hence, this review aims to delve into the intricate damage mechanisms of microelectronic devices within various radiation environments and highlight the latest advancements in radiation-hardening techniques. The ultimate goal is to bolster the reliability and stability of these devices under extreme conditions. The review initiates by outlining the spectrum of radiation environments that microelectronic devices may confront, encompassing space radiation, nuclear explosion radiation, laboratory radiation, and process radiation. It also delineates the potential damage types that these environments can inflict upon microelectronic devices. Furthermore, the review elaborates on the underlying mechanisms through which different radiation environments impact the performance of microelectronic devices, which includes a detailed analysis of the characteristics and fundamental mechanisms of damage when microelectronic devices are subjected to total ionizing dose effects and single-event effects. In addition, the review delves into the promising application prospects of several key radiation-hardening techniques for enhancing the radiation tolerance of microelectronic devices.

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Section: System-levelmentioning

confidence: 99%

Overview on Radiation Damage Effects and Protection Techniques in Microelectronic Devices

Ren,

Zhu,

et al. 2024

Science and Technology of Nuclear Installations

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“…It is often used to achieve frequency synthesis, clock generation, clock recovery, and other functions [18]. Figure 2 shows the topological structure of the charge pump phase-locked loop (CPPLL), which is mainly composed of five submodules, namely, the frequency discriminator (PFD), the charge pump (CP), the low-pass In recent years, in order to reduce the effect of the SET on a PLL, researchers have proposed various methods to reduce the SET sensitivity of the CP output stage [2,[13][14][15][16][17]. Loveless et al [15] proposed that the hardened scheme of changing the current-type CP to the voltage-type CP could effectively reduce the SET sensitivity.…”

Section: Topology Of the Cppllmentioning

confidence: 99%

A Single-Event-Hardened Scheme of Phase-Locked Loop Microsystems for Aerospace Applications

2022

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In order to improve the ability of the phase-locked loop (PLL) microsystem applied in the aerospace environment to suppress the irradiation effect, this study presents an efficient charge pump hardened scheme by using the radiation-hardened-by-design (RHBD) technology. In this study, the sensitivity analysis of the single-event transient (SET) at different nodes of charge pump and different bombardment energies is carried out. Without changing the original structure and loop parameters, a hardened scheme of phase-locked loop to suppress the single-event effect is proposed. A digital control circuit is added between the charge pump and low-pass filter, which greatly reduces the sensitivity of the charge pump to the SET. The classical double-exponential current pulse model is used to simulate the SET effect on the unreinforced and reinforced phase-locked loops, and the reliability of the proposed reinforcement scheme is verified. The simulation results based on the SMIC 130 nm standard complementary metal–oxide–semiconductor (CMOS) process show that the peak value of the transient response fluctuation of the phase-locked loop using the proposed single-event-hardened scheme decreased by 94.2%, the lock recovery time increased by 75.3%, and the maximum phase shift decreased by 90.8%. This shows that the hardened scheme can effectively reduce the sensitivity of the PLL microsystems to the SET effects.

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“…In order to improve the ability of the VCO to resist the single-event effect, many researchers have proposed effective VCO-hardened structures [12][13][14][15][16][17][18][19]. H. Yuan et al reduced the sensitivity of the VCO to bias through multi-bias technology and interleaving bias [12], while the ability of the single-event transient effect tolerance of the ring oscillator was improved through layout hardening.…”

Section: Introductionmentioning

confidence: 99%

“…However, this digital coding reinforcement scheme would introduce additional sensitive nodes in digital circuits. B. Liang et al proposed a proportional and integral path-independent PLL-hardened scheme [18], and simulation results showed that the frequency error caused by radiation on the VCO was reduced by 80% to 90%. V. Diez-Acereda and others used a filter network to harden the oscillator [19], and introduced an RC network to suppress current transients, thus improving the ability of the VCO to resist the SET effect.…”

Section: Introductionmentioning

confidence: 99%

A Single-Event-Hardened Scheme for Ring Oscillator Applied to Radiation-Resistant PLL Microsystems

2023

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A voltage-controlled oscillator (VCO) is one of the key modules of the phase-locked loop (PLL) microsystem, and it is easy to bombard using high-energy particles in a radiation environment, resulting in the single-event effect. In order to improve the anti-radiation ability of the PLL microsystems used in the aerospace environment, a new voltage-controlled oscillator hardened circuit is proposed in this work. The circuit consists of delay cells with an unbiased differential series voltage switch logic structure with a tail current transistor. By reducing sensitive nodes and using the positive feedback of the loop, the recovery process of the VCO circuit to the single-event transient (SET) is reduced and accelerated, so as to reduce the sensitivity of the circuit to the single-event effect. The simulation results based on the SMIC 130 nm complementary metal–oxide–semiconductor (CMOS) process show that the maximum phase shift difference of the PLL with the hardened VCO is reduced by 53.5%, which shows that the hardened VCO structure can reduce the sensitivity of the PLL to the SET and improve the reliability of the PLL in the radiation environment.

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A system-level method for hardening phase-locked loop to single-event effects

Cited by 5 publications

References 22 publications

Overview on Radiation Damage Effects and Protection Techniques in Microelectronic Devices

Overview on Radiation Damage Effects and Protection Techniques in Microelectronic Devices

A Single-Event-Hardened Scheme of Phase-Locked Loop Microsystems for Aerospace Applications

A Single-Event-Hardened Scheme for Ring Oscillator Applied to Radiation-Resistant PLL Microsystems

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