Overview on Radiation Damage Effects and Protection Techniques in Microelectronic Devices

Abstract

With the rapid advancement of information technology, microelectronic devices have found widespread applications in critical sectors such as nuclear power plants, aerospace equipment, and satellites. However, these devices are frequently exposed to diverse radiation environments, presenting significant challenges in mitigating radiation-induced damage. Hence, this review aims to delve into the intricate damage mechanisms of microelectronic devices within various radiation environments and highlight the latest advancements in radiation-hardening techniques. The ultimate goal is to bolster the reliability and stability of these devices under extreme conditions. The review initiates by outlining the spectrum of radiation environments that microelectronic devices may confront, encompassing space radiation, nuclear explosion radiation, laboratory radiation, and process radiation. It also delineates the potential damage types that these environments can inflict upon microelectronic devices. Furthermore, the review elaborates on the underlying mechanisms through which different radiation environments impact the performance of microelectronic devices, which includes a detailed analysis of the characteristics and fundamental mechanisms of damage when microelectronic devices are subjected to total ionizing dose effects and single-event effects. In addition, the review delves into the promising application prospects of several key radiation-hardening techniques for enhancing the radiation tolerance of microelectronic devices.

Ferroelectric Domain Intrinsic Radiation Resistance of Lithium Niobate Ferroelectric Single−Crystal Film

“…When the gamma ray energy is between a few hundred keV and a few MeV, gamma rays in this energy range can penetrate deeply into microelectronic devices and induce the generation of electron−hole pairs, leading to charge accumulation damage. When the energy of gamma rays exceeds 1 MeV, their penetrating ability is further increased, which not only generates secondary electrons in semiconductor materials, but also may cause atomic displacements, leading to severe lattice damage [30].As the core of ferroelectric microelectronic devices, the study of the irradiation resistance of ferroelectric domains and their conducting domain walls can help the wide application of ferroelectric microelectronic devices in the fields of deep−space exploration and nuclear engineering.…”