A Single-Event-Hardened Scheme of Phase-Locked Loop Microsystems for Aerospace Applications

Xiang, Qi; Liu, Hongxia; Zhou, Yulun

doi:10.3390/mi13122102

Cited by 3 publications

(3 citation statements)

References 20 publications

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“…Therefore, using the radiation-hardened-by-design (RHBD) technology to reinforce the CP and voltage-controlled oscillator (VCO) can reduce the sensitivity of the PLL to the singleevent effect [9,10]. The author has put forward an effective radiation hardening scheme for the CP in the previous work [11], and this work focuses on the radiation hardening design of the VCO module.…”

Section: Introductionmentioning

confidence: 99%

A Single-Event-Hardened Scheme for Ring Oscillator Applied to Radiation-Resistant PLL Microsystems

2023

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A voltage-controlled oscillator (VCO) is one of the key modules of the phase-locked loop (PLL) microsystem, and it is easy to bombard using high-energy particles in a radiation environment, resulting in the single-event effect. In order to improve the anti-radiation ability of the PLL microsystems used in the aerospace environment, a new voltage-controlled oscillator hardened circuit is proposed in this work. The circuit consists of delay cells with an unbiased differential series voltage switch logic structure with a tail current transistor. By reducing sensitive nodes and using the positive feedback of the loop, the recovery process of the VCO circuit to the single-event transient (SET) is reduced and accelerated, so as to reduce the sensitivity of the circuit to the single-event effect. The simulation results based on the SMIC 130 nm complementary metal–oxide–semiconductor (CMOS) process show that the maximum phase shift difference of the PLL with the hardened VCO is reduced by 53.5%, which shows that the hardened VCO structure can reduce the sensitivity of the PLL to the SET and improve the reliability of the PLL in the radiation environment.

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Section: Introductionmentioning

confidence: 99%

A Single-Event-Hardened Scheme for Ring Oscillator Applied to Radiation-Resistant PLL Microsystems

2023

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“…The soft error performance before and after radiation in DG TFETs 6T SRAM cells have also been studied. Xiang et al showed the effect of single-event transient (SET) in a phase-locked loop and proposed an SET-hardened structure to improve the irradiation resistance of PLL [ 4 , 5 ]. Since the transistor device in this work is graphene-based, it is important to highlight the effects of radiation on graphene and graphene-based materials.…”

Section: Introductionmentioning

confidence: 99%

Investigation of Single-Event Upset in Graphene Nano-Ribbon FET SRAM Cell

Adesina

2023

Micromachines

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In recent years, graphene has received so much attention because of its superlative properties and its potential to revolutionize electronics, especially in VLSI. This study analyzes the effect of single-event upset (SEU) in an SRAM cell, which employs a metal-oxide semiconductor type graphene nano-ribbon field effect transistor (MOS-GNRFET) and compares the results with another SRAM cell designed using a PTM 10 nm FinFET node. Our simulations show that there is a change in the data stored in the SRAM after a heavy ion strike. However, it recovers from radiation effects after 0.46 ns for GNRFET and 0.51 ns for FinFET. Since the degradation observed in Q and Qb of GNRFET SRAM are 2.7X and 2.16X as compared to PTM nano-MOSFET, we can conclude that GNRFET is less robust to single effect upset. In addition, the stability of SRAM is improved by increasing the supply voltage VDD.

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“…performance before and after radiation in DG TFETs 6T SRAM cell are also studied. Xiang et al showed the effect of single event transient (SET) in a phase locked loop and proposed SET-hardened structure to improve the irradiation resistance of PLL [4,5]. Note that it has been shown theoretically and experimentally that graphene nano-ribbon FET (GNRFET) can potentially replace planar CMOS and FinFET [6].…”

Section: Introductionmentioning

confidence: 99%

Investigation of Single Event Upset in Graphene Nano-Ribbon FET SRAM Cell

Adesina¹

2023

Preprint

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In recent years, graphene has received so much attention because of its superlative properties and its potential to revolutionize electronics especially in VLSI. This study analyzes the effect of single event upset (SEU) in SRAM cell which employs metal-oxide semiconductor type graphene nano-ribbon field effect transistor (MOS-GNRFET) and compares the results respectively with another SRAM cell designed in PTM 10nm FinFET node. Our simulation show there is a change in data stored in the SRAM after heavy ion strike. However, it recovers from radiation effects after 0.46 ns for GNRFET and 0.51 ns for FinFET. Since the degradation observed in Q and Qb of GNRFET SRAM are 2.7X and 2.16X as compared to PTM nano-MOSFET, we can conclude that GNRFET is less robust to single effect upset. In addition, the stability of SRAM can be improved by increasing the supply voltage VDD.

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A Single-Event-Hardened Scheme of Phase-Locked Loop Microsystems for Aerospace Applications

Cited by 3 publications

References 20 publications

A Single-Event-Hardened Scheme for Ring Oscillator Applied to Radiation-Resistant PLL Microsystems

A Single-Event-Hardened Scheme for Ring Oscillator Applied to Radiation-Resistant PLL Microsystems

Investigation of Single-Event Upset in Graphene Nano-Ribbon FET SRAM Cell

Investigation of Single Event Upset in Graphene Nano-Ribbon FET SRAM Cell

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