A surface-potential based model for GaN HEMTs in RF power amplifier applications

John, Dan; Allerstam, Fredrik; Rödle, Thomas; Murad, S. K.; Smit, G.D.J.

doi:10.1109/iedm.2010.5703321

Cited by 7 publications

(2 citation statements)

References 11 publications

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“…Several SP-based compact models for large-signal analysis of HEMTs have recently been proposed in Refs. [4,20,21]. An SP equation (SPE) resembling that used in MOSFETs is given in Ref.…”

Section: Introductionmentioning

confidence: 99%

“…Due to the fact that HEMTs operate in accumulation in the channel rather than in inversion as in enhancement-mode MOSFETs, the symmetric linearization model (SLM) used in the MOSFET SP-model, which is crucial in arriving at compact expressions for the currents and charges, cause problems for HEMT modeling OE4 ; therefore, it is chosen not to use the symmetric linearization technique (SLT) in developing the core part of the compact model in Ref. [4]. The model symmetry with respect to source-drain interchange is therefore not guaranteed.…”

Section: Introductionmentioning

confidence: 99%

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A complete and accurate surface-potential based large-signal model for compound semiconductor HEMTs

Liu¹,

Sun

2014

J. Semicond.

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A complete and accurate surface potential based large-signal model for compound semiconductor HEMTs is presented. A surface potential equation resembling the one used in conventional MOSFET models is achieved. The analytic solutions from the traditional surface potential theory that developed in MOSFET models are inherited. For core model derivation, a novel method is used to realize a direct application of the standard surface potential model of MOSFETs for HEMT modeling, without breaking the mathematic structure. The high-order derivatives of I -V /C -V remain continuous, making the model suitable for RF large-signal applications. Furthermore, the self-heating effects and the transconductance dispersion are also modelled. The model has been verified through comparison with measured DC IV, Gummel symmetry test, CV, minimum noise figure, small-signal Sparameters up to 66 GHz and single-tone input power sweep at 29 GHz for a 4 75 m 0.1 m InGaAs/GaAs power pHEMT, fabricated at a commercial foundry.

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“…Several SP-based compact models for large-signal analysis of HEMTs have recently been proposed in Refs. [4,20,21]. An SP equation (SPE) resembling that used in MOSFETs is given in Ref.…”

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%