A complete and accurate surface-potential based large-signal model for compound semiconductor HEMTs

Abstract

A complete and accurate surface potential based large-signal model for compound semiconductor HEMTs is presented. A surface potential equation resembling the one used in conventional MOSFET models is achieved. The analytic solutions from the traditional surface potential theory that developed in MOSFET models are inherited. For core model derivation, a novel method is used to realize a direct application of the standard surface potential model of MOSFETs for HEMT modeling, without breaking the mathematic structure. The high-order derivatives of I -V /C -V remain continuous, making the model suitable for RF large-signal applications. Furthermore, the self-heating effects and the transconductance dispersion are also modelled. The model has been verified through comparison with measured DC IV, Gummel symmetry test, CV, minimum noise figure, small-signal Sparameters up to 66 GHz and single-tone input power sweep at 29 GHz for a 4 75 m 0.1 m InGaAs/GaAs power pHEMT, fabricated at a commercial foundry.

Knowledge‐based neural network with Bayesian optimization for efficient nonlinear RF device modeling

“…The $$$ A $$$ represents the physical size of the transistor, while $$$ f $$$ represents the operating frequency, and $$$ {V}_d $$$ and $$$ {V}_g $$$ represent the bias voltages of the transistor. Generally, $$$ {F}_c $$$ is a surface‐potential based large‐signal Model for HEMTs, as shown in Figure 2 42,43 . $$$ {F}_m $$$ specifies how $$$ y $$$ is transformed into a representation of test results.…”

“…Generally, F c is a surface-potential based large-signal Model for HEMTs, as shown in Figure 2. 42,43 F m specifies how y is transformed into a representation of test results. Therefore, F c and F m can be used to generate a more detailed or accurate device model.…”