A physics based compact model of I–V and C–V characteristics in AlGaN/GaN HEMT devices

Khandelwal, Sourabh; Fjeldly, Tor A.

doi:10.1016/j.sse.2012.05.054

Cited by 111 publications

(59 citation statements)

References 24 publications

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“…Input capacitance dependence on the gate voltage has been previously analyzed and modeled in [20][21][22]. This capacitance is dominantly influenced by the change in the 2DEG sheet density when HEMT is being turned on and has a big step around threshold.…”

Section: Input Capacitance Dependence On the Gate Voltagementioning

confidence: 99%

Physical modeling and optimization of a GaN HEMT design with a field plate structure for high frequency application

Cucak

Vasić

García

et al. 2014

2014 IEEE Energy Conversion Congress and Exposition (ECCE)

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Abstract-In this paper, physical modeling of a GaN HEMT with a field plate structure is proposed, with the objective of providing the connection between the physical design parameters of the device (geometry, Al mole fraction, type of the field plate, etc) and on-resistance together with parasitic capacitances of the device. In this way, it is possible to optimize the design of a switching device for a particular application, which in our case is a high frequency DC DC converter for Envelope Tracking and Envelope Elimination and Restoration techniques. In this work, extrinsic models for output characteristics together with input, output and reverse capacitance of a depletion mode GaN HEMT with a field plate structure were obtained. The obtained physical model was implemented in a Simplorer simulation model of a high frequency buck converter and verified by the prototype that employed modeled GaN HEMT, operating at 7, 15 and 20MHz of switching frequency. Comparing to the measured efficiency curves, simulation results showed good agreement, especially in the low power range at high switching frequency, which are the operating conditions in our application.

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Section: Input Capacitance Dependence On the Gate Voltagementioning

confidence: 99%

Physical modeling and optimization of a GaN HEMT design with a field plate structure for high frequency application

Cucak

Vasić

García

et al. 2014

2014 IEEE Energy Conversion Congress and Exposition (ECCE)

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show abstract

Section: Introductionmentioning

confidence: 99%

“…Since the 90s, a new generation of semiconductor components (HEMT) is under study and evaluation thanks to the advent of wide band gap materials such as GaN [5], GaN based devices are very useful for high frequency high temperature microwave applications such as radar systems [6]. Transistors AlGaN / GaN HEMTs results are very promising for power electronics and high frequency due to their two-dimensional electron gas 2DEG high density and high mobility as well as to their high breakdown field [7].To develop a reliable model of HEMT, an accurate estimate of the two-dimensional electron gas density at AlGaN / GaN interface is of considerable importance. A number of charge control models for HEMTs have been developed to characterize the 2-DEG concentration.…”

mentioning

confidence: 99%

Analytic Estimation of Two-Dimensional Electron Gas Density and Current-Voltage Characteristic in AlGaN/GaN HEMT’s

Babaya¹,

Bri²,

Saadi³

2018

IJECE

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This paper is mainly dedicated to understand the phenomena governing the formation of two-dimensional electron gas (2DEG) confined in the quantum well which hold the role of the channel in the high electron density transistors (HEMT) based on AlGaN / GaN heterojunction. The theory takes into account: the crystal structure, the spontaneous and piezoelectric polarization concept, the formation mechanism of two-dimensional electron gas at the AlGaN / GaN interface, the approximate resolution of the Poisson and Schrödinger equations to determine the density of Two-dimensional electron gas after the analytical formula of the current-voltage characteristic is established. Our study is also concerned with the dependence of the twodimensional electron gas density on the following technological parameters: Aluminum molare fraction, AlGaN layer thickness and AlGaN layer doping, In order to control the influence of these parameters on the device performance. Finally, the current-voltage characteristic which reflects the variation of the drain-source current as a function of the modulation of the gate voltage has been discussed. Keyword: 2DEG INTRODUCTIONThe area of microelectronics has been marked by an increase in the demand for components which can operate in frequency increasingly higher [1][2][3]. Emerging needs in this area are not only related to the telecommunications market, but in other areas of application such as embedded electronics at bound for the automotive and aeronautic. The largest concerns in semiconductor integrated circuits are high-speed operation and low power consumption [4]. Since the 90s, a new generation of semiconductor components (HEMT) is under study and evaluation thanks to the advent of wide band gap materials such as GaN [5], GaN based devices are very useful for high frequency high temperature microwave applications such as radar systems [6]. Transistors AlGaN / GaN HEMTs results are very promising for power electronics and high frequency due to their two-dimensional electron gas 2DEG high density and high mobility as well as to their high breakdown field [7].To develop a reliable model of HEMT, an accurate estimate of the two-dimensional electron gas density at AlGaN / GaN interface is of considerable importance. A number of charge control models for HEMTs have been developed to characterize the 2-DEG concentration. These models are useful as they provide an insight into the physical operation of the device, but they generally require simplifying assumptions for the 2DEG density. Some models assume a linear dependency of 2DEG density at the gate bias, but the values of 2DEG density are underestimated near the threshold [8], [9]. Other models offer a

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“…The compact charge based model for current-voltage and capacitance-voltage characteristics in AlGaN/GaN HEMT is presented in Ref. [9]. Similarly, for generic MISHEMTs, a unified 2DEG density based compact model is presented in Ref.…”

Section: Introductionmentioning

confidence: 99%

Interface DOS dependent analytical model development for DC characteristics of normally-off AlN/GaN MOSHEMT

Swain

Jena

Lenka

2015

Superlattices and Microstructures

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A physics based compact model of I–V and C–V characteristics in AlGaN/GaN HEMT devices

Cited by 111 publications

References 24 publications

Physical modeling and optimization of a GaN HEMT design with a field plate structure for high frequency application

Physical modeling and optimization of a GaN HEMT design with a field plate structure for high frequency application

Analytic Estimation of Two-Dimensional Electron Gas Density and Current-Voltage Characteristic in AlGaN/GaN HEMT’s

Interface DOS dependent analytical model development for DC characteristics of normally-off AlN/GaN MOSHEMT

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