A surface potential and current model for polarity-controllable silicon nanowire FETs

Abstract

Abstract-Silicon nanowire FET (SiNWFET) with dynamic polarity control has been experimentally demonstrated and has shown large potential in circuit applications. To fully explore its circuit-level opportunities, a physics-based compact model of the polarity-controllable SiNWFET is required. Therefore, in this paper, we extend the solution for conventional SiNWFETs to polarity-controllable SiNWFETs. By solving the current continuity equation, the potential distribution and drain current is obtained. The model shows good agreement with TCAD simulation. It can be used as the core to develop the complete compact model for polarity-controllable SiNWFETs.

Drain Current Model of One-Dimensional Ballistic Reconfigurable Transistors

“…, N ) placed along the channel. The given band model was adopted from the evanescent mode analysis approach [26], [28]- [30]. The electrostatic potential, ψ(r), inside a transistor contains a transverse potential ψ t (r), which describes the electrostatics perpendicular to the channel and represents a partial solution of Poisson's equation, as well as a longitudinal potential ψ l (r) called evanescent mode, responsible for the potential variation along the channel.…”

“…The reason is that the analytical expression for the drain current corresponding to the thermionic emission with a shifted Fermi level and including energy-independent transmission can be used at small bias, when the contribution of thermally excited electrons in the total current is large enough [24]. The analytical current calculations on the basis of drift-diffusion model do not properly take into account the effect of SB tunneling and BTBT on the electron transport [25], [26]. The empirical continuous compact dc model based on a set of empirical fitting parameters is reliable in the framework of experimental data [27], but it cannot be used for predictions.…”