2020
DOI: 10.3390/electronics9050806
|View full text |Cite
|
Sign up to set email alerts
|

A Sub-Threshold Differential CMOS Schmitt Trigger with Adjustable Hysteresis Based on Body Bias Technique

Abstract: This paper presents a sub-threshold differential CMOS Schmitt trigger with tunable hysteresis, which can be used to enhance the noise immunity of low-power electronic systems. By exploiting the body bias technique to the positive feedback transistors, the hysteresis of the proposed Schmitt trigger is generated, and it can be adjusted by the applied bias voltage to the bulk terminal of the utilized PMOS transistors. The principle of operation and the main formulas of the proposed circuit are discussed. The circ… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1

Citation Types

0
3
0

Year Published

2021
2021
2023
2023

Publication Types

Select...
3
2

Relationship

0
5

Authors

Journals

citations
Cited by 6 publications
(3 citation statements)
references
References 29 publications
0
3
0
Order By: Relevance
“…Next 𝑉 𝑚,𝑝 is determined, by equating the currents in 𝑀 1 and 𝑀 5 : So we substitute (11) in (9), and finally by solving for 𝑉 𝐿𝐻 the expression in ( 12) is obtained.…”
Section: Analytical Modelmentioning
confidence: 99%
“…Next 𝑉 𝑚,𝑝 is determined, by equating the currents in 𝑀 1 and 𝑀 5 : So we substitute (11) in (9), and finally by solving for 𝑉 𝐿𝐻 the expression in ( 12) is obtained.…”
Section: Analytical Modelmentioning
confidence: 99%
“…The associate editor coordinating the review of this manuscript and approving it for publication was Paolo Crippa . [27], [28], [29]. This is mainly due to the supply voltage reduction trend, which represents a key design technique in the power consumption optimization of electronic systems [30].…”
Section: Introductionmentioning
confidence: 99%
“…In 2018, Bastan et al proposed a subthreshold pseudo-differential ST in 0.18µm CMOS process, which consumes 150nW when operating at 0.4V [36]. In 2020, Radfar et al presented a differential ST circuit (0.18µm CMOS process) with tunable hysteresis based on body biasing [28]. The circuit has a tuning range of approximately 110mV , and it consumes 1.38µW with a supply voltage of 0.6V .…”
Section: Introductionmentioning
confidence: 99%