Weak Inversion Model of an Inverting CMOS Schmitt Trigger

Abstract

In this article the subthreshold characteristics of an inverting single input CMOS Schmitt trigger circuit are analyzed. Analytical expressions for the low-to-high and high-to-low hysteresis transition voltages are determined. The analytical model provides physical insight into the circuit behavior. The derived expressions are linearly dependent on the supply voltage and the temperature, and logarithmically dependent on the dimensions of the transistors. Simulation results validated the proposed model, with a maximum error between the analytical and simulated transition points smaller than 14mV. An ASIC in AMS 0.35µm CMOS process has been fabricated to experimentally validate the derived expressions. The maximum error between the analytical and measured transition points is below 36mV.

Recent Start-Up Techniques Intended for TEG Energy Harvesting: A Review

“…Therefore, ST is an effective solution for mitigating global variations and decreasing supply voltage requirements, while keeping an effective on-to-off ratio, in start-up circuits. This is of great significance in our case, since it can yield an effective RO operating well in the subthreshold region [88].…”

Subthreshold Modeling of a Tunable CMOS Schmitt Trigger

“…The associate editor coordinating the review of this manuscript and approving it for publication was Paolo Crippa . [27], [28], [29]. This is mainly due to the supply voltage reduction trend, which represents a key design technique in the power consumption optimization of electronic systems [30].…”

“…In 2022, Sandiri et al analyzed ST logic gates using Dynamic Threshold MOS (DTMOS) technique [37]. In the same year, we derived in [27], [38] an analytical model for the hysteresis voltage of the low power CMOS ST proposed by Al-Sarawi [39]. In this article, the subthreshold characteristics of the tunable single input CMOS Schmitt trigger proposed by Wang [40] in 1991 are modeled for the first time.…”