A sub 1 V high PSRR CMOS bandgap voltage reference

Chahardori, Mohammad; Atarodi, M.; Sharifkhani, Mohammad

doi:10.1016/j.mejo.2011.06.010

Cited by 27 publications

(13 citation statements)

References 13 publications

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“…PSRR of the circuit is 109 dB at low frequencies, 80 dB at 10 KHzand 27 dB at 1 MHz In a particular frequency range; the obtained PSRR is reasonably higher than the one in the conventional circuits. A scheme is exploited in order to reduce the sensitivity of the output voltage to supply voltage [7], and PSRR is 14 dB higher at lower frequencies. PSRR in the proposed circuit is 51 dB, 60 dB and 12 dB higher for lower frequencies, 10KHz frequency and 1 MHz frequency, respectively, in comparison with the voltage reference described in [10] which is relatively close to the designed circuit in power dissipation and output voltage.…”

Section: Simulation Resultsmentioning

confidence: 99%

An Enhanced Low Power High PSRR Band Gap Voltage Reference Using MOSFETS in Strong Inversion Region

Soleimani¹,

Asadi²

2015

ELELIJ

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In this paper, a band gap voltage reference using MOSFETs in strong inversion region is presented. The proposed circuit represents a high PSRR (Power Supply Rejection Ratio) and low temperature sensitivity and is capable of operating properly at supply voltages lower than 1v. In the designed circuit, the PSRR is improved using regulated voltage and a feedback loop. In addition, the circuit is independent on supply voltage noise. The circuit is designed in 180nm TSMC CMOS technology and is simulated using HSPICE. The obtained output voltage is 466.7mV and the obtained temperature deviation average under temperatures between-20°c to 100°c is 29.1 ppm/c°. PSRR is 109 dB at low frequencies. Calculated power dissipation with 1.2v supply voltage in room temperature is 42µw.

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Section: Simulation Resultsmentioning

confidence: 99%

An Enhanced Low Power High PSRR Band Gap Voltage Reference Using MOSFETS in Strong Inversion Region

Soleimani¹,

Asadi²

2015

ELELIJ

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“…This work aims to focus on power supply rejection ratio (PSRR) since it is an important specification in RFEH power management system. Papers such as [8], [9], and [10] focus on the PSRR specification of bandgap reference. The techniques involved to increase PSRR involve voltage regulation of the transistor [8], cascoding transistors [9] and combination of cascode and voltage regulation [10].…”

Section: Introductionmentioning

confidence: 99%

“…Papers such as [8], [9], and [10] focus on the PSRR specification of bandgap reference. The techniques involved to increase PSRR involve voltage regulation of the transistor [8], cascoding transistors [9] and combination of cascode and voltage regulation [10]. Although these circuits will result in high PSRR, they exhibit weakness such as requiring relatively high-power supply, making it unsuitable for low power applications [8] and also cannot obtain a reference voltage of lower than 1.2V [9] which is crucial for circuits that operate in sub-threshold or near-threshold.…”

Section: Introductionmentioning

confidence: 99%

“…The techniques involved to increase PSRR involve voltage regulation of the transistor [8], cascoding transistors [9] and combination of cascode and voltage regulation [10]. Although these circuits will result in high PSRR, they exhibit weakness such as requiring relatively high-power supply, making it unsuitable for low power applications [8] and also cannot obtain a reference voltage of lower than 1.2V [9] which is crucial for circuits that operate in sub-threshold or near-threshold. In [10], high PSRR can only be obtained at higher voltage references, at near-threshold and sub-threshold voltage the PSRR degrades because of the usage of BJT which consumes a lot of voltage headroom at supply voltage of 1.2V.…”

Section: Introductionmentioning

confidence: 99%

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-81dB PSRR regulated cascode fully MOS bandgap reference for power management in RF energy harvesting systems

K.Zulkalnain

Kamsani

Sidek

et al. 2019

IJEECS

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In the midst of technological advance where everything is connected via the internet, IoT is emerging as a potential solution to everything, ranging from health wearables to smart city. An RFEH power management system has promising benefits that could further improve the powering of IoT devices as it has potential for clean energy as well as other advantages which consists of a rectifier, bandgap reference and LDO as the main core. However, the main challenge is supplying clean and low noise power to sensitive circuits such as low power sensors, VCOs and PLLs. A high PSRR bandgap reference that rejects noise at the power supply is needed so that the circuitry powered by RFEH systems would be able to function properly. This paper presents a bandgap with MOS PTAT and CTAT extraction achieving a PSRR of -81dB at a V<sub>ref</sub> of 0.415V was designed on 130nm CMOS technology targeting IoT RFEH devices that operate at sub-threshold and near-threshold region that exhibits improvement over the base design.

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“…Conventional voltage references are based on bandgap reference (BGR) circuit, which is one of the most fundamental building blocks in integrated circuits [11][12]. A BGR voltage is usually composed of a weighted sum of V BE and thermal voltage.…”

Section: Introductionmentioning

confidence: 99%

A Resistorless Voltage Reference with High-order Temperature Curvature Compensation in 55 nm CMOS Process

Zhang²,

Zhang

et al. 2017

Proceedings of the 2017 5th International Conference on Mechatronics, Materials, Chemistry and Computer Engineering (ICMMCCE 20

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This paper presents a temperature/supply stable and resistorless voltage reference for high-precision portable electronic products. the reference obtains a good temperature coefficient over a wide temperature range through high-order curvature compensation. In order to reduce the temperature nonlinearity, the piecewise linear temperature curvature compensation circuit is used. The voltage reference is simulated with 55nm CMOS technology. It operates at the voltage of 2.5V and generates a stable voltage at 0.742V with a minimal temperature coefficient of 3.19ppm/℃ for temperature ranging from -40 to 125℃.

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A sub 1 V high PSRR CMOS bandgap voltage reference

Cited by 27 publications

References 13 publications

An Enhanced Low Power High PSRR Band Gap Voltage Reference Using MOSFETS in Strong Inversion Region

An Enhanced Low Power High PSRR Band Gap Voltage Reference Using MOSFETS in Strong Inversion Region

-81dB PSRR regulated cascode fully MOS bandgap reference for power management in RF energy harvesting systems

A Resistorless Voltage Reference with High-order Temperature Curvature Compensation in 55 nm CMOS Process

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