A Sub-1 ppm/°C Precision Bandgap Reference With Adjusted-Temperature-Curvature Compensation

Chen, Hou-Ming; Lee, Chang-Chi; Jheng, Shih-Han; Chen, Wei-Chih; Lee, Bo-Yi

doi:10.1109/tcsi.2017.2658186

Cited by 87 publications

(32 citation statements)

References 26 publications

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“…The results of 2000-point Monte Carlo simulation show that the output voltages 281 mV and 320.5 mV had variation coefficients of 1.73% and 1.44%, respectively. The minimum power consumption was 84.1 nW at 0.9 V supply, and the layout area of the proposed voltage reference was 0.0086 mm 2 . It was more suitable for low-power fields, such as human body area networks, wearable medical devices and medical measurements, especially portable biomedical application.…”

Section: Discussionmentioning

confidence: 99%

“…In recent years, even though several voltage references have been developed, traditional voltage references have many problems. In the literature [2], the traditional bandgap reference, which adopts BJTs, can generate stable voltage. However, this kind of circuit consumes too much area and power, and only has one output voltage, which cannot satisfy the development of ultra-low power and high-performance applications.…”

Section: Introductionmentioning

confidence: 99%

“…In the literature [5], a method to improve the PSRR by using the structure of feedback loop is presented, but the TC is not ideal, this technique cannot achieve dual-output voltage reference, and the overall power consumption of the circuit is larger. None of these circuits [1][2][3][4][5] meet the requirements for low power, low voltage, high precision, low area, and compatibility of CMOS process.…”

Section: Introductionmentioning

confidence: 99%

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16.8/15.2 ppm/°C 81 nW High PSRR Dual-Output Voltage Reference for Portable Biomedical Application

et al. 2019

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A dual-output voltage reference circuit with two reference voltages of 281 mV (Vref1) and 320.5 mV (Vref2) is presented in this paper. With a novel and precise circuit structure, the proposed circuit, operating in the subthreshold region, integrates two different output voltages into a circuit to form a dual-output voltage reference, and cascode current mirrors are used to enhance the power supply rejection ratio (PSRR). The proposed circuit was designed in a standard 0.18-µm CMOS process and has a series of attractive features: low-temperature coefficient (TC), high-PSRR, low-Line sensitivity (LS), small-chip area and low-power consumption. Monte Carlo simulations for 2000 samples showed that the output voltages 281 mV and 320.5 mV had a variation coefficient of 1.73% and 1.44%, respectively. The minimum power consumption was 84.1 nW at 0.9 V supply, proving that the circuit is suitable for portable biomedical application. The active area of the proposed voltage reference was only 0.0086 mm2.

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Section: Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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16.8/15.2 ppm/°C 81 nW High PSRR Dual-Output Voltage Reference for Portable Biomedical Application

et al. 2019

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“…Traditional voltage reference circuits, such as the well known bandgap voltage reference (BGR), use the bipolar junction transistor (BJT) temperature dependence in order to generate a proportional to absolute temperature (PTAT) voltage, which is then utilized in order to produce a first-order temperature compensation scheme [2,7]. Subsequent approaches focus on partially canceling the BJT's base-emitter voltage non-linearities, in order to provide a higher-order, non-linear compensation [8][9][10][11][12][13]. The penalty of this approach is the higher design complexity and increased power consumption.…”

Section: Introductionmentioning

confidence: 99%

Low-Power, Subthreshold Reference Circuits for the Space Environment: Evaluated with γ-rays, X-rays, Protons and Heavy Ions

et al. 2019

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The radiation tolerance of subthreshold reference circuits for space microelectronics is presented. The assessment is supported by measured results of total ionization dose and single event transient radiation-induced effects under γ -rays, X-rays, protons and heavy ions (silicon, krypton and xenon). A high total irradiation dose with different radiation sources was used to evaluate the proposed topologies for a wide range of applications operating in harsh environments similar to the space environment. The proposed custom designed integrated circuits (IC) circuits utilize only CMOS transistors, operating in the subthreshold regime, and poly-silicon resistors without using any external components such as compensation capacitors. The circuits are radiation hardened by design (RHBD) and they were fabricated using TowerJazz Semiconductor’s 0.18 μm standard CMOS technology. The proposed voltage references are shown to be suitable for high-precision and low-power space applications. It is demonstrated that radiation hardened microelectronics operating in subthreshold regime are promising candidates for significantly reducing the size and cost of space missions due to reduced energy requirements.

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“…Many voltage reference circuits use curvature compensation circuits to generate a low-TC output voltage. [136,137,126,138,139] are a few examples which are not power efficient. Also, a few curvature compensation circuits are not designed in standard CMOS processes [140,133,126,137,138].…”

Section: Future Workmentioning

confidence: 99%

Integrated Circuits for Programming Flash Memories in Portable Applications

Navidi¹

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Smart devices such as smart grids, smart home devices, etc. are infrastructure systems that connect the world around us more than before. These devices can communicate with each other and help us manage our environment. This concept is called the Internet of Things (IoT). Not many smart nodes exist that are both low-power and programmable. Floating-gate (FG) transistors could be used to create adaptive sensor nodes by providing programmable bias currents. FG transistors are mostly used in digital applications like Flash memories. However, FG transistors can be used in analog applications, too. Unfortunately, due to the expensive infrastructure required for programming these transistors, they have not been economical to be used in portable applications. In this work, we present low-power approaches to programming FG transistors which make them a good candidate to be employed in future wireless sensor nodes and portable systems. First, we focus on the design of low-power circuits which can be used in programming the FG transistors such as highvoltage charge pumps, low-drop-out regulators, and voltage reference cells. Then, to achieve the goal of reducing the power consumption in programmable sensor nodes and reducing the programming infrastructure, we present a method to program FG transistors using negative voltages. We also present charge-pump structures to generate the necessary negative voltages for programming in this new configuration.

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A Sub-1 ppm/°C Precision Bandgap Reference With Adjusted-Temperature-Curvature Compensation

Cited by 87 publications

References 26 publications

16.8/15.2 ppm/°C 81 nW High PSRR Dual-Output Voltage Reference for Portable Biomedical Application

16.8/15.2 ppm/°C 81 nW High PSRR Dual-Output Voltage Reference for Portable Biomedical Application

Low-Power, Subthreshold Reference Circuits for the Space Environment: Evaluated with γ-rays, X-rays, Protons and Heavy Ions

Integrated Circuits for Programming Flash Memories in Portable Applications

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