A Study on the Charge Carrier Transport of Passivating Contacts

Feldmann, Frank; Nogay, Gizem; Polzin, Jana‐Isabelle; Steinhauser, Bernd; Richter, Armin; Fell, Andreas; Schmiga, Christian; Hermle, Martin; Glunz, Stefan W.

doi:10.1109/jphotov.2018.2870735

Cited by 43 publications

(30 citation statements)

References 31 publications

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“…[3][4][5] To reduce the recombination loss, passivating contacts (also referred to as carrier-selective contacts) have been introduced for high-quality passivation with low contact resistance. 2,[5][6][7][8][9][10][11][12][13][14] The passivating contact cells differ from conventional cells in the following ways: (1) the recombination occurring at the metal-semiconductor junction is reduced by a passivation layer between the crystalline silicon and metal contact, and (2) the majority carriers can move to the metal contact, while the minority carriers cannot be moved from crystalline silicon to the metal contact owing to carrier selectivity.…”

Section: Introductionmentioning

confidence: 99%

Role of polysilicon in poly-Si/SiO_xpassivating contacts for high-efficiency silicon solar cells

et al. 2019

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Section: Introductionmentioning

confidence: 99%

Role of polysilicon in poly-Si/SiO_xpassivating contacts for high-efficiency silicon solar cells

et al. 2019

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“…Supplementary Data 1 for tabulated data). 24,58,69,90,101,108,123,[230][231][232][233][234][235][236] b, Comparison of efficiency loss (1-η/ηlim)x100 against development time for heavily doped directly metallised contacts (black) and passivating contact (colored) technologies (data from Fig. 1a).…”

Section: Comparison Of Contacting Approachesmentioning

confidence: 99%

Passivating contacts for crystalline silicon solar cells

et al. 2019

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The global photovoltaic (PV) market is dominated by crystalline silicon (c-Si) based technologies with heavily doped, directly metallised contacts. Recombination of photogenerated electrons and holes at the contact regions is increasingly constraining the power conversion efficiencies of these devices as other performance-limiting energy losses are overcome. To move forward, c-Si PV technologies must implement alternative contacting approaches. Passivating contacts, which incorporate thin films within the contact structure that simultaneously supress recombination and promote charge carrier selectivity, are a promising next step for the mainstream c-Si PV industry. In this work we review the fundamental physical processes governing contact formation in c-Si. In doing so we identify the role passivating contacts play in increasing c-Si solar cell efficiencies beyond the limitations imposed by heavy doping and direct metallisation. Strategies towards the implementation of passivating contacts in industrial environments are discussed.

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“…Furthermore, poly‐Si accounts for free carrier absorption (FCA) in the near infrared (NIR) wavelength range . Therefore, into an attempt to obtain more transparent high‐thermal budget CSPCs, poly‐Si layer has been alloyed with oxygen or carbon and applied in FBC devices in combination with a‐Si:H–based CSPC at the textured front side . Notwithstanding the promising results at both passivation level and cell level, these alloys are still not optically optimal presenting higher absorption coefficient than c‐Si in the visible range and FCA in the NIR range, just like poly‐Si .…”

Section: Introductionmentioning

confidence: 99%

“…34 Therefore, into an attempt to obtain more transparent high-thermal budget CSPCs, poly-Si layer has been alloyed with oxygen 35,36 or carbon 37 and applied in FBC devices in combination with a-Si:H-based CSPC at the textured front side. 38,39 Notwithstanding the promising results at both passivation level and cell level, these alloys are still not optically optimal 35,40 presenting higher absorption coefficient than c-Si in the visible range and FCA in the NIR range, just like poly-Si. 41 Thus, to minimize these optical losses due to poly-Si layers while keeping high their passivation quality, a careful surface engineering has to be performed.…”

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Implantation‐based passivating contacts for crystalline silicon front/rear contacted solar cells

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Yang

Groot

et al. 2020

Progress in Photovoltaics

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In this work, we develop SiOx/poly‐Si carrier‐selective contacts grown by low‐pressure chemical vapor deposition and boron or phosphorus doped by ion implantation. We investigate their passivation properties on symmetric structures while varying the thickness of poly‐Si in a wide range (20‐250 nm). Dose and energy of implantation as well as temperature and time of annealing were optimized, achieving implied open‐circuit voltage well above 700 mV for electron‐selective contacts regardless the poly‐Si layer thickness. In case of hole‐selective contacts, the passivation quality decreases by thinning the poly‐Si layer. For both poly‐Si doping types, forming gas annealing helps to augment the passivation quality. The optimized doped poly‐Si layers are then implemented in c‐Si solar cells featuring SiO2/poly‐Si contacts with different polarities on both front and rear sides in a lean manufacturing process free from transparent conductive oxide (TCO). At cell level, open‐circuit voltage degrades when thinner p‐type poly‐Si layer is employed, while a consistent gain in short circuit current is measured when front poly‐Si thickness is thinned down from 250 to 35 nm (up to +4 mA/cm2). We circumvent this limitation by decoupling front and rear layer thickness obtaining, on one hand, reasonably high current (JSC‐EQE = 38.2 mA/cm2) and, on the other hand, relatively high VOC of approximately 690 mV. The best TCO‐free device using Ti‐seeded Cu‐plated front contact exhibits a fill factor of 75.2% and conversion efficiency of 19.6%.

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A Study on the Charge Carrier Transport of Passivating Contacts

Cited by 43 publications

References 31 publications

Role of polysilicon in poly-Si/SiO_xpassivating contacts for high-efficiency silicon solar cells

Role of polysilicon in poly-Si/SiO_xpassivating contacts for high-efficiency silicon solar cells

Passivating contacts for crystalline silicon solar cells

Implantation‐based passivating contacts for crystalline silicon front/rear contacted solar cells

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A Study on the Charge Carrier Transport of Passivating Contacts

Cited by 43 publications

References 31 publications

Role of polysilicon in poly-Si/SiOxpassivating contacts for high-efficiency silicon solar cells

Role of polysilicon in poly-Si/SiOxpassivating contacts for high-efficiency silicon solar cells

Passivating contacts for crystalline silicon solar cells

Implantation‐based passivating contacts for crystalline silicon front/rear contacted solar cells

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Product

Resources

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Role of polysilicon in poly-Si/SiO_xpassivating contacts for high-efficiency silicon solar cells

Role of polysilicon in poly-Si/SiO_xpassivating contacts for high-efficiency silicon solar cells