2019
DOI: 10.1038/s41560-019-0463-6
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Passivating contacts for crystalline silicon solar cells

Abstract: The global photovoltaic (PV) market is dominated by crystalline silicon (c-Si) based technologies with heavily doped, directly metallised contacts. Recombination of photogenerated electrons and holes at the contact regions is increasingly constraining the power conversion efficiencies of these devices as other performance-limiting energy losses are overcome. To move forward, c-Si PV technologies must implement alternative contacting approaches. Passivating contacts, which incorporate thin films within the cont… Show more

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Cited by 448 publications
(443 citation statements)
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References 210 publications
(257 reference statements)
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“…The smaller transmittance in the blue spectral range is most probably the result of parasitic absorption within the doped silicon layers, which are used for charge carrier separation. Applying alternative contact schemes with wide bandgap materials could improve the optical performance in this case [52]. Moreover, as can be seen in Figure 10, 40% of the green and near-infrared light is still reflected instead of absorbed.…”
Section: Spectrally Selective Solar Cellsmentioning
confidence: 98%
See 1 more Smart Citation
“…The smaller transmittance in the blue spectral range is most probably the result of parasitic absorption within the doped silicon layers, which are used for charge carrier separation. Applying alternative contact schemes with wide bandgap materials could improve the optical performance in this case [52]. Moreover, as can be seen in Figure 10, 40% of the green and near-infrared light is still reflected instead of absorbed.…”
Section: Spectrally Selective Solar Cellsmentioning
confidence: 98%
“…Applying alternative contact schemes with wide bandgap materials could improve the optical performance in this case [52]. Moreover, as can be seen in Figure 10, 40% of the green and nearinfrared light is still reflected instead of absorbed.…”
Section: Spectrally Selective Solar Cellsmentioning
confidence: 98%
“…[ 4,5 ] Historically, this problem has been solved by the use of thin dielectric film materials, such as SiO 2 , SiN x , Al 2 O 3 , and intrinsic hydrogenated amorphous Si (a‐Si:H(i)). [ 6–9 ] Although those dielectric films can passivate the interface defects very well, their insulator nature impedes further carrier transport, which forces the use of partial passivation and local contact schemes in specific photovoltaic (PV) devices, [ 10–14 ] inevitably leading to processing complexity. In this case, for example, a high‐temperature firing process is required to enable the conductive metal electrode material to penetrate the dielectric layers, which forms a local transport path.…”
Section: Introductionmentioning
confidence: 99%
“…Our SHJ process starts with immersing the raw, as-cut c-Si wafers into an alkaline solution to obtain 7−10 micrometric randomly distributed pyramids as texture at the front and back surfaces. [17] To accommodate the 2T design, we fabricated the SHJ in a so-called rear-junction configuration (i.e., electrons are collected at the illuminated side of the device). We then deposited the intrinsic and doped silicon amorphous layers via plasmaenhanced chemical vapor deposition (PECVD) and later indium tin oxide (ITO) by sputtering to form the passivating heterojunction contacts at front and back, as well as the recombination junction, needed to electrically couple the sub cells in the tandem.…”
mentioning
confidence: 99%
“…We then deposited the intrinsic and doped silicon amorphous layers via plasmaenhanced chemical vapor deposition (PECVD) and later indium tin oxide (ITO) by sputtering to form the passivating heterojunction contacts at front and back, as well as the recombination junction, needed to electrically couple the sub cells in the tandem. [17] To accommodate the 2T design, we fabricated the SHJ in a so-called rear-junction configuration (i.e., electrons are collected at the illuminated side of the device). [18] We then sputtered a layer of nickel oxide (NiO x ) as hole transport layer (HTL) for the inverted (p-i-n) perovskite top cell onto the sunward ITO layer of the bottom cell, acting as recombination junction.…”
mentioning
confidence: 99%