2021
DOI: 10.3390/s21072454
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A Study on Real Time IGBT Junction Temperature Estimation Using the NTC and Calculation of Power Losses in the Automotive Inverter System

Abstract: This paper proposes a junction temperature estimation algorithm for the insulated gate bipolar transistor (IGBT) based on a power loss calculation and a thermal impedance model for inverter systems. The Simulink model was designed to calculate the power losses of power semiconductor devices and to estimate the junction temperature with a simplified thermal impedance model. This model can estimate the junction temperature up to the transient state, including the steady state. The parameters used to calculate th… Show more

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Cited by 13 publications
(6 citation statements)
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“…As inverters have been developed to drive induction motors and supply important applications, it has become crucial to understand how to regulate the IGBT junction temperature, which is the power module of an inverter. The IGBTs are often restricted by their junction temperature, and if the junction temperature is not correctly controlled, there is a significant risk of failure due to overheating [8]. The IGBTs are responsible for all power loss; the heat produced by the IGBT is mostly transferred to the substrate, heat sink, and air through heat conduction.…”
Section: Methods 21 Thermal Resistance Modelmentioning
confidence: 99%
“…As inverters have been developed to drive induction motors and supply important applications, it has become crucial to understand how to regulate the IGBT junction temperature, which is the power module of an inverter. The IGBTs are often restricted by their junction temperature, and if the junction temperature is not correctly controlled, there is a significant risk of failure due to overheating [8]. The IGBTs are responsible for all power loss; the heat produced by the IGBT is mostly transferred to the substrate, heat sink, and air through heat conduction.…”
Section: Methods 21 Thermal Resistance Modelmentioning
confidence: 99%
“…Li et al [21] established the generalized power loss model of hybrid switch, taking the device size as the continuous input variable and the total power loss and junction temperature as the output. Lim et al [22] was used to calculate the power loss of power semiconductor devices by the Simulink model, and the junction temperature is estimated based on the loss obtained from the model and the thermal impedance model of the inverter systems. A general silicon carbide punch through IGBT structure is realized by adopting appropriate physics based models and parameters by Johannesson et al [23], and it is proved that the switching loss increases with the increase of charge carrier life.…”
Section: Literature Reviewmentioning
confidence: 99%
“…Different power losses, including conduction, switching, and thermal power losses, introduce temperature cycling during the operation of an IGBT power module [31,32], and this temperature cycling profile weakens the properties of the IGBT module and shortens its useful lifetime. As a result, in the selection process of an IGBT module for a target application, loss modeling and thermal analysis of the IGBT module can be used to predict the module's temperature based on the power losses and heat energy calculation.…”
Section: Introductionmentioning
confidence: 99%