A study of Ta/sub 2/O/sub 5//rugged Si capacitor of 23 μC/μm/sup 2/ applied to high-density DRAMs using sub-0.2 μm process

Ohji, Yuzuru; Iijima, S.; Saito, Ayumi; Miki, Hiroshi; Kanai, Masaki; Kunitomo, M.; Yamamoto, S.; Furukawa, R.; Sugawara, Yutaka; Uemura, T.; Kuroda, Jun; Nakata, M; Kisu, T.; Kawagoe, Takeshi; Kawakita, K.; Hasegawa, Masaya; Nakamura, M.; Kajigaya, K.; Hidaka, Mutsuo; Yamamoto, Hiroyuki; Asano, Ichiro; Takeda, E.

doi:10.1109/relphy.1999.761585

1999 IEEE International Reliability Physics Symposium Proceedings. 37th Annual (Cat. No.99CH36296)

DOI: 10.1109/relphy.1999.761585

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A study of Ta/sub 2/O/sub 5//rugged Si capacitor of 23 μC/μm/sup 2/ applied to high-density DRAMs using sub-0.2 μm process

Yuzuru Ohji

S. Iijima²,

Ayumi Saito³

et al.

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A study of Ta/sub 2/O/sub 5//rugged Si capacitor of 23 μC/μm/sup 2/ applied to high-density DRAMs using sub-0.2 μm process

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