Pure Ru thin films were deposited on SiO2/Si substrates, using Ru(C2H5C5H4)2 with C4H8O (THF) solvent, by liquid source metalorganic chemical vapor deposition. The Ru single phase could be obtained under all growth conditions. For temperatures below 350°C, deposition occurred in the surface reaction region because the kinetics increased exponentially as a function of the deposition temperature with an activation energy of about 1.1 eV. Above 350°C, the deposition was controlled by the mass transport process. Step coverage for the Ru thin films deposited at 300–325°C with an aspect ratio of 3.3 was about 100%. The Ru thin films grown at 325°C showed a dense and smooth microstructure and had resistivities of <100 µΩ·cm.
AbstracL The ternary B8-type (NiAs-type) phases in the systems &-Fe-= and Cr-Fe-'E have teen investigated using M h b a u e r spectroscopy in the temperature range 4.2-3a) K. Paramagnetic doublels have been observed with linewidths which increase with decreasing temperature. The hyperline interaction parameters and Debye-Waller factors have been determined. The obvious occurrence of magnetic ordering effects as evidenced by the magnetic susceptibility was found to be reflected as broadening of the M k b a u e r resonance lines. "be experimentally deduced effective m a s implies that the strength of the covalent bonding of the resonant atom to the lattice decreases from Cc-Fe-% to Cr-Fe-%. This clearly m d a l e s with the increasing ionicily of the chemical bonds as indicated by the systematic changes in the axial ratio c f a and the magnetic moment.
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