A study of SRAM NBTI by OTF measurement

Aono, H.; Murakami, Eiichi; Shiga, K.; Fujita, Fuminori; Yamamoto, S.; Ogasawara, M.; Yamaguchi, Yasuo; Yanagisawa, K.; Kubota, K.

doi:10.1109/relphy.2008.4558865

Cited by 13 publications

(7 citation statements)

References 11 publications

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“…16. The net effect of the two components is the smaller power law exponents (< 0.1) observed in this letter and some of the other fast measurement studies [12], [13]. It is also observed here that the power law slopes generally decrease as the NBT stress voltage is reduced.…”

Section: A Nbti Of Strained and Unstrained P-fetssupporting

confidence: 65%

NBTI Reliability of P-Channel Transistors With Diamond-Like Carbon Liner Having Ultrahigh Compressive Stress

Liu

Tan

Yang

et al. 2009

IEEE Electron Device Lett.

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Negative bias temperature instability (NBTI) characteristics of p-channel field-effect transistors (p-FETs) with diamond-like carbon (DLC) liner stressor having ultrahigh compressive stress (∼5 GPa) are investigated for the first time. Ultrafast measurement was employed for NBTI study. Power law slopes ranging from ∼0.058 to ∼0.072 are reported here. P-FETs with higher channel strain show greater threshold voltage shift (ΔV th ) and transconductance degradation than those with lower or no channel strain under the same NBT stress condition V stress . Strained p-FETs with Si S/D and DLC stressors are projected to have an NBTI lifetime of ten years at V G = −0.99 V using E ox power law lifetime extrapolation model or at V G = −0.76 V using the exponential V stress model.

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Section: A Nbti Of Strained and Unstrained P-fetssupporting

confidence: 65%

NBTI Reliability of P-Channel Transistors With Diamond-Like Carbon Liner Having Ultrahigh Compressive Stress

Liu

Tan

Yang

et al. 2009

IEEE Electron Device Lett.

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“…Finally, there exists another OTF technique [23] that superimposes a small ac signal on V G,STRESS to measure both I DLIN and G M and calculates degradation as ∆V T = ∆I DLIN /G M to avoid I DLIN0 and mobility issue. However, this technique is shown to yield incorrect ∆V T [46] due to the use of simplified G M expression and error in G M measurement.…”

mentioning

confidence: 99%

The Impact of Nitrogen Engineering in Silicon Oxynitride Gate Dielectric on Negative-Bias Temperature Instability of p-MOSFETs: A Study by Ultrafast On-The-Fly $I_{\rm DLIN}$ Technique

Maheta

Olsen

Ahmed

et al. 2008

IEEE Trans. Electron Devices

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Abstract-Degradation of p-MOSFET parameters during negative-bias temperature instability (NBTI) stress is studied for different nitridation conditions of the silicon oxynitride (SiON) gate dielectric, using a recently developed ultrafast on-the-fly I DLIN technique having 1-µs resolution. It is shown that the degradation magnitude, as well as its time, temperature, and field dependence, is governed by nitrogen (N) density at the Si/SiON interface. The relative contribution of interface trap generation and hole trapping to overall degradation as varying interfacial N density is qualitatively discussed. Plasma oxynitride films having low interfacial N density show interface trap dominated degradation, whereas relative hole trapping contribution increases for thermal oxynitride films having high N density at the Si/SiON interface.Index Terms-Device degradation, hole trapping, interface traps, negative-bias temperature instability (NBTI), on-the-fly (OTF) I DLIN , plasma oxynitride, p-MOSFETs, thermal oxynitride.

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“…Another OTF technique [29] superimposes a small ac signal on V GSTRESS and measures both I DLIN and G M , and calculates the degradation as ΔV T = ΔI DLIN /G M . Although I DLIN0 is not required to be measured with a minimum possible delay after the application of stress, such an ac OTF technique gives erroneous ΔV T [31] due to the use of a simplified G M expression and the error due to G M measurement. Moreover, using this technique degradation cannot be obtained for a stress time below 1 s.…”

mentioning

confidence: 99%

Development of an Ultrafast On-the-Fly $I_{\rm DLIN}$ Technique to Study NBTI in Plasma and Thermal Oxynitride p-MOSFETs

Maheta

Kumar

Purawat

et al. 2008

IEEE Trans. Electron Devices

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Abstract-An ultrafast on-the-fly technique is developed to study linear drain current (I DLIN ) degradation in plasma and thermal oxynitride p-MOSFETs during negative-bias temperature instability (NBTI) stress. The technique enhances the measurement resolution ("time-zero" delay) down to 1 μs and helps to identify several key differences in NBTI behavior between plasma and thermal films. The impact of the time-zero delay on time, temperature, and bias dependence of NBTI is studied, and its influence on extrapolated safe-operating overdrive condition is analyzed. It is shown that plasma-nitrided films, in spite of having higher N density, are less susceptible to NBTI than their thermal counterparts.Index Terms-Field acceleration, negative-bias temperature instability (NBTI), plasma oxynitride, p-MOSFET, safe-operating voltage, temperature activation, thermal oxynitride, time exponents.

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A study of SRAM NBTI by OTF measurement

Cited by 13 publications

References 11 publications

NBTI Reliability of P-Channel Transistors With Diamond-Like Carbon Liner Having Ultrahigh Compressive Stress

NBTI Reliability of P-Channel Transistors With Diamond-Like Carbon Liner Having Ultrahigh Compressive Stress

The Impact of Nitrogen Engineering in Silicon Oxynitride Gate Dielectric on Negative-Bias Temperature Instability of p-MOSFETs: A Study by Ultrafast On-The-Fly $I_{\rm DLIN}$ Technique

Development of an Ultrafast On-the-Fly $I_{\rm DLIN}$ Technique to Study NBTI in Plasma and Thermal Oxynitride p-MOSFETs

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