A Study of Quantum Transport in End-of-Roadmap DG-MOSFETs Using a Fully Self-Consistent Wigner Monte Carlo Approach

Semiclassical and Quantum Transport in CNTFETs Using Monte Carlo Simulation

“…For L = 25 nm, the direct source-drain tunneling is always negligible, and the main possible quantum effect is the quantum reflection occurring at the drain-end of the channel, as already observed in nano-MOSFETs [29] and even in n-i-n diodes [44]. In Fig.…”

Current transport models for nanoscale semiconductor devices

“…(76) by means of the Monte Carlo technique. Such a program was recently realized in [115,[250][251][252]. However, since the kernel of the quantum scattering operator is not positively defined, the numerical weight of the particle trajectory increases rapidly, and the numerical stability of the trajectorybased Monte Carlo algorithm becomes a critical issue.…”

Efficient method to generate time evolution of the Wigner function for open quantum systems

“…Both forms are difficult to solve and, as a result, a plethora of numerical methods for evolving the Wigner function propagation have been developed. These have involved (i) the integral form of Moyal's equation [20][21][22][23][24][25], (ii) reduction of the Moyal equation to a Boltzmann-like equation [26,27], (iii) propagation of Gaussian and coherent states [28][29][30][31], (iv) Monte Carlo schemes in which the Wigner function is contracted by averaging over stochastic trajectories of pure-states [32][33][34][35], and (v) evolving the density matrix in the coordinate representation [36,37].…”