Semiclassical and Quantum Transport in CNTFETs Using Monte Carlo Simulation

Nguyen, Huu-Nha; Querlioz, Damien; Galdin‐Retailleau, S.; Dollfus, Philippe

doi:10.1109/ted.2010.2096820

Cited by 9 publications

(4 citation statements)

References 47 publications

(52 reference statements)

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“…The distribution function f ν (x, k), from which all internal quantities such as current I ds and charge density n can be derived, is statistically obtained by using a multi-particle Monte-Carlo method [8], [11]. In this approach, the individual carrier trajectories are simulated under the influence of an electric field and random scattering forces.…”

Section: Transport Modelmentioning

confidence: 99%

“…Applying those models assumes the contact regions to be highly doped. Usually, doping concentrations in the range of 0.4 nm −1 to 1 nm −1 are used [8], [18], which correspond to a highly degenerate situation with Fermi levels at around 0.1 eV to 0.3 eV above the first conduction band. According to Fig.…”

Section: Transport Modelmentioning

confidence: 99%

“…In this paper, selected device figures-of-merit (FOMs) for analog HF applications are analyzed by means of a BoltzmannPoisson solver (similar to [8]) with a phenomenological model for the charge injection. The contact model is inspired by the model described in [9], [10].…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

About the charge injection limitation in Schottky barrier CNTFETs

Claus

Mothes

Schröter

2013

2013 International Semiconductor Conference Dresden - Grenoble (ISCDG)

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The injection of charges into the channel of a carbon nanotube (CNT) field effect transistor (FET), and, hence, the overall device behavior are strongly affected by the interface between the CNT and the metall contacts and the tube portion underneath the metall contacts (contact region). The properties of the interface and the contact region depend on details of the fabrication process and the materials used. Thus, a detailed understanding of the related phenomena facilitates device and process optimization. A major issue in optimizing the interface and the contact region is the limitation of charge injection due to potential barriers in the contact region and clipping. The limitation along with the transport within the channel is studied by means of the Boltzmann-transport equation (BTE) in combination with a phenomenological contact model which also considers tunneling through near-contact potential barriers. The related results are discussed with respect to CNT-based 1D-electronics for high-frequency (HF) analog applications.

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Section: Transport Modelmentioning

confidence: 99%

Section: Transport Modelmentioning

confidence: 99%

See 1 more Smart Citation

About the charge injection limitation in Schottky barrier CNTFETs

Claus

Mothes

Schröter

2013

2013 International Semiconductor Conference Dresden - Grenoble (ISCDG)

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“…However, as the gate length of the MOSFETs has reduced down to 10 nm scale, not only well-known quantum confinement effect and ballistic transport, but also quantum transport effects along the channel direction such as source-drain (SD) direct tunneling, quantum reflection inside the channel and quantum repulsion in the source and drain regions have become more and more important [1][2][3]. Therefore, to analyze the device performances of future MOSFETs precisely, a device simulation considering scattering and quantum transport effects is indispensable.…”

Section: Introductionmentioning

confidence: 99%

Wigner Monte Carlo approach to quantum and dissipative transport in Si-MOSFETs

Koba

Tsuchiya

Ogawa

2011

2011 International Conference on Simulation of Semiconductor Processes and Devices

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We investigate the influences of quantum transport and scattering effects in Si double-gate MOSFETs based on Wigner Monte Carlo (WMC) approach. It is shown that quantum reflection effect makes significant differences in microscopic features of electron transport between classical and quantum approaches and can even reduce drain current at on-state, but it does not necessarily produce drastic change in macroscopic properties including the drain current. On the other hand, source-drain direct tunneling crucially degrades the subthreshold properties in scaled MOSFETs with sub-10 nm gate length. Furthermore, the ability of the WMC method to describe quantumclassical transition of carrier transport is demonstrated.

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