A study of hot pixel annealing in the Hubble Space Telescope Wide Field Camera 3 CCDs

Polidan, Elizabeth; Waczynski, Augustyn; Marshall, P.W.; Johnson, Scott D.; Marshall, C.J.; Reed, Robert A.; Kimble, Randy A.; Delo, Gregory; Schlossberg, D. J.; Russell, Anne Marie; Beck, Terry; Wen, Yiting; Yagelowich, John; Hill, Robert J.

doi:10.1117/12.552111

Cited by 11 publications

(3 citation statements)

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“…These CCDs were exposed to 63 MeV protons at a total fluence of 2.5 × 10 9 protons/cm 2 , equivalent to an exposure at 12.5 MeV of 1.04 × 10 9 protons/cm 2 . After the anneal, a fraction of 2.5 × 10 −3 hot pixels were detected at a threshold of 26 e − /10 min [20]. Applying this threshold to the LBNL data, and scaling the result to the same dose, we find a fraction of 2.0 × 10…”

Section: F Generation Of Hot Pixelsmentioning

confidence: 93%

Radiation Tolerance of Fully-Depleted P-Channel CCDs Designed for the SNAP Satellite

Dawson

Bebek

Emes

et al. 2008

IEEE Trans. Nucl. Sci.

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Abstract-Thick, fully depleted p-channel charge-coupled devices (CCDs) have been developed at the Lawrence Berkeley National Laboratory (LBNL). These CCDs have several advantages over conventional thin, n-channel CCDs, including enhanced quantum efficiency and reduced fringing at nearinfrared wavelengths and improved radiation tolerance. Here we report results from the irradiation of CCDs with 12.5 and 55 MeV protons at the LBNL 88-Inch Cyclotron and with 0.1 -1 MeV electrons at the LBNL 60 Co source. These studies indicate that the LBNL CCDs perform well after irradiation, even in the parameters in which significant degradation is observed in other CCDs: charge transfer efficiency, dark current, and isolated hot pixels. Modeling the radiation exposure over a sixyear mission lifetime with no annealing, we expect an increase in dark current of 20 e − /pixel/hr, and a degradation of charge transfer efficiency in the parallel direction of 3 × 10 −6 and 1 × 10 −6 in the serial direction. The dark current is observed to improve with an annealing cycle, while the parallel CTE is relatively unaffected and the serial CTE is somewhat degraded. As expected, the radiation tolerance of the p-channel LBNL CCDs is significantly improved over the conventional n-channel CCDs that are currently employed in space-based telescopes such as the Hubble Space Telescope.

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Section: F Generation Of Hot Pixelsmentioning

confidence: 93%

Radiation Tolerance of Fully-Depleted P-Channel CCDs Designed for the SNAP Satellite

Dawson

Bebek

Emes

et al. 2008

IEEE Trans. Nucl. Sci.

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“…For the JANUS mission, it has shown that a thermal anneal will not significantly suppress radiation-induced dark current in the detectors. This means the mission will not need to make use of an anneal cycle which is currently used for radiation-induced damage removal in other space-borne image sensors such as the CCDs used in the Hubble Space Telescope Wide Field Camera [19].…”

Section: Jinst 13 C03036mentioning

confidence: 99%

Thermal annealing response following irradiation of a CMOS imager for the JUICE JANUS instrument

et al. 2018

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“…Radiation-induced dark current effects at low operating temperatures are also of interest and it has been shown that annealing of hot pixels can occur in CCDs below room temperature. [2], [3 ], [ 4]. This implies that room temperature irradiations do not give a good estimate of on-orbit effects for cooled imagers.…”

Section: Introductionmentioning

confidence: 99%

Low temperature alpha particle irradiation of a STAR1000 CMOS APS

Hopkinson

Mohammadzadeh

2007

2007 9th European Conference on Radiation and Its Effects on Components and Systems

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A study of hot pixel annealing in the Hubble Space Telescope Wide Field Camera 3 CCDs

Cited by 11 publications

References 0 publications

Radiation Tolerance of Fully-Depleted P-Channel CCDs Designed for the SNAP Satellite

Radiation Tolerance of Fully-Depleted P-Channel CCDs Designed for the SNAP Satellite

Thermal annealing response following irradiation of a CMOS imager for the JUICE JANUS instrument

Low temperature alpha particle irradiation of a STAR1000 CMOS APS

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