Thermal annealing response following irradiation of a CMOS imager for the JUICE JANUS instrument

Lofthouse-Smith, Daniel-Dee; Soman, Matthew R.; Allanwood, E. A. H.; Stefanov, Konstantin D.; Holland, Andrew D.; Leese, M. R.; Turne, P.

doi:10.1088/1748-0221/13/03/c03036

Cited by 4 publications

(3 citation statements)

References 17 publications

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“…As −25 • C is the warmest temperature of the expected operational temperature range of JANUS, this can be taken to be the worst case BOL modal dark current. The analysis of warm-temperature dark current data (+30 • C to +40 • C) has been reported elsewhere [6].…”

Section: Beginning Of Lifementioning

confidence: 99%

Predicting the effect of radiation damage on dark current in a space-qualified high performance CMOS image sensor

et al. 2019

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Section: Beginning Of Lifementioning

confidence: 99%

Predicting the effect of radiation damage on dark current in a space-qualified high performance CMOS image sensor

et al. 2019

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“…This device has been characterised in the following studies [4,5] and in this paper, image lag is presented for the CIS115, pre and post TID for four devices. In addition to this, image lag is presented for a range of transfer gate 'on' voltages for a proton and gamma irradiated device.…”

Section: Cis115mentioning

confidence: 99%

Image lag optimisation in a 4T CMOS image sensor for the JANUS camera on ESA's JUICE mission to Jupiter (Conference Presentation)

Lofthouse-Smith

Soman

Allanwood

et al. 2018

High Energy, Optical, and Infrared Detectors for Astronomy VIII

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The CIS115, the imager selected for the JANUS camera on ESA's JUICE mission to Jupiter, is a Four Transistor CMOS Image Sensor (CIS) fabricated in a 0.18 µm process. 4T CIS (like the CIS115) transfer photo generated charge collected in the pinned photodiode to the sense node through the Transfer Gate. These regions are held at different potentials and charge is transferred from the potential well under the pinned photodiode to the potential well under the sense node through a voltage pulse applied to the transfer gate. Incomplete transfer of this charge can result in image lag, where signal in previous frames can manifest itself in subsequent frames, often appearing as ghosted images in successive readouts, seriously affecting image quality in scientific instruments, which must be minimised. This is important in the JANUS camera, where image quality is essential to help JUICE meet its scientific objectives. Image lag investigation in this paper compare results pre and post Total Ionizing Dose and documents a decrease in image lag following Total Ionizing dose below device full well capacity, scaled with dose. This paper also presents two techniques to minimise image lag within the CIS115. An analysis of the optimal voltage for the transfer gate voltage is detailed where optimisation of this TG "ON" voltage has shown to minimise image lag in both an engineering model, gamma and proton irradiated devices. Secondly, a new readout method of the CIS115 is described, where following standard image integration, the PPD is biased to the reset voltage level (VRESET) through the transfer gate to empty charge on the PPD and has shown to reduce image lag in the CIS115

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“…For the recently launched JUICE mission, 1 the European Space Agency chose a CIS115 2 for the JANUS instrument due to its particular ability to endure the harsh Jovian radiation environment 34 . 5 CMOS image sensors are also being considered for future soft X-ray space missions such as the Einstein Probe 6 and THESEUS. 7 The Transient High Energy Sky and Early Universe Surveyor (THESEUS) is a proposed ESA mission to detect, locate and monitor gamma-ray bursts as well as other high energy transients.…”

Section: Introductionmentioning

confidence: 99%

Characterization, quantum efficiency, and radiation hardness of a CMOS image sensor optimized for soft x-ray astronomy

Townsend-Rose,

Buggey,

Ivory

et al. 2023

UV, X-Ray, and Gamma-Ray Space Instrumentation for Astronomy XXIII

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CIS221-X is the first in a new generation of monolithic CMOS image sensors optimized for soft x-ray applications. The pixels are built on 35 μm thick, high-resistivity epitaxial silicon and feature Deep Depletion Extension (DDE) implants, facilitating over depletion by reverse substrate bias. When cooled to -40 °C, CIS221-X reports a readout noise of 3.3 e- RMS and 12.4 ± 0.06 e-/pixel/s of dark current. The 40μm pixels experience near-zero image lag. Following per-pixel gain correction, an energy resolution of 130 ± 0.4 eV FWHM has been measured at 5.9 keV. In the 0.3 – 1.8 keV energy range, the sensor achieves a quantum efficiency of above 80%. Radiation tests have shown that both the readout noise and dark current increase with total ionising dose and that the OBF can help to mitigate the increase in dark current. The measured electro-optical parameters and the preliminary ionising radiation results strongly support the use of the CIS221-X in soft x-ray applications.

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Thermal annealing response following irradiation of a CMOS imager for the JUICE JANUS instrument

Cited by 4 publications

References 17 publications

Predicting the effect of radiation damage on dark current in a space-qualified high performance CMOS image sensor

Predicting the effect of radiation damage on dark current in a space-qualified high performance CMOS image sensor

Image lag optimisation in a 4T CMOS image sensor for the JANUS camera on ESA's JUICE mission to Jupiter (Conference Presentation)

Characterization, quantum efficiency, and radiation hardness of a CMOS image sensor optimized for soft x-ray astronomy

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