Predicting the effect of radiation damage on dark current in a space-qualified high performance CMOS image sensor

Abstract

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Development of a photon-counting near-fano-limited x-ray CMOS image sensor for THESEUS' SXI

“…In radiation studies of Teledyne-e2v CIS for other missions, such as the CIS115 for JANUS, 8 the BOL dark current and Total Ionising Dose (TID)-induced dark current has been insignificant compared to the increase in bright pixel defects induced by the TNID radiation environment. 9,10 The increased pitch and depleted volume in the CIS221-X (when compared to the partially depleted 7 µm pixel of the CIS115) will increase the dark current defect density per pixel, and therefore it is even more critical to understand the effect of TNID-induced dark current defects on the overall imager performance. The detailed analysis of the TNID-induced CIS115 bright pixel defect has been utilised to build a model for the THESEUS pixel and radiation environment.…”

Quantum efficiency of the CIS115 in a radiation environment

“…Up-to-date radiation environment and shielding models were used to predict an end-of-life (EOL) TID, with a factor of safety of 2, of 44 krad(Si). 3 The radiation qualification of the sensor was carried out at the Open University's CEI, where CIS115 devices were characterised both before and after being subjected to ionising and non-ionising sources of radiation. 4 The impact of radiation on opto-electronic properties has been studied extensively using these data, including effects on image lag 5 and dark current 3 that have been reported previously.…”