A Structural Study of Tin-Doped Indium Oxide (ITO) Ceramics Using &lt;sup&gt;119&lt;/sup&gt;Sn Mössbauer Spectroscopy and Neutron Diffraction

Nadaud, Nicolas; Nanot, M.; Jové, J.; Roisnel, Thierry

doi:10.4028/www.scientific.net/kem.132-136.1373

Cited by 21 publications

(5 citation statements)

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“…The hump between 2θ = 20° and 30° is owing to the background of the glass substrates. The XRD pattern for the same sample, recorded after its heat-treatment at 723 K is polycrystalline with peaks corresponding to In 4 Sn 3 O 12 [15,16]. Iron oxide phases are absent on the observed XRD patterns.…”

Section: Optoelectronic Propertiesmentioning

confidence: 84%

Effect of Sputtering Power on Optoelectronic Properties of Iron-Doped Indium Saving Indium-Tin Oxide Thin Films

Ohtsuka¹,

Sergiienko

Petrovska

et al. 2019

Metallofiz. Noveishie Tekhnol.

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Iron-doped indium-tin oxide (ITO) thin films with reduced to 50% mass indium oxide content are deposited onto glass substrates preheated at 523 K by co-sputtering of ITO and Fe 2 O 3 targets in mixed argon-oxygen atmosphere. The influence of different radio frequency (RF) plasma power for deposition of Fe 2 O 3 target on the electrical, optical, structural, and morphological properties of the films is investigated by means of four point probe, Ultraviolet-Visible-Infrared (UV-Vis-IR) spectroscopy, X-ray diffraction and atomic force microscopy methods. The volume resistivity of 930 µΩ⋅cm and transmittance over 85% are obtained for thin films sputtered under optimum conditions. Iron doping results in significant improvement in films transmittance and increasing the crystallization temperature of ITO thin films.

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Section: Optoelectronic Propertiesmentioning

confidence: 84%

Effect of Sputtering Power on Optoelectronic Properties of Iron-Doped Indium Saving Indium-Tin Oxide Thin Films

Ohtsuka¹,

Sergiienko

Petrovska

et al. 2019

Metallofiz. Noveishie Tekhnol.

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“…The same experiments were also conducted for ITO. In ITO, the formation of interstitial oxide ions in 16c Wyckoff site is determined experimentally 7 . An interesting aspect in defect chemistry in supersaturated ITO with a tin content over 5% was the formation of a neutral defect association of substituted tin ions with an interstitial oxide ion, 8–11 (2Sn In ·O i ″), x and a dissociation of this cluster yielded dependence of the conductivity, i.e., .…”

Section: Introductionmentioning

confidence: 99%

Equilibrium Dependence of the Conductivity of Pure and Tin‐Doped Indium Oxide on Oxygen Partial Pressure and Formation of an Intrinsic Defect Cluster

Ohya

Yamamoto

Ban

2007

Journal of the American Ceramic Society

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The dependence of the electrical conductivity of pure (99.999%) and tin‐doped indium oxide (In2O3) ceramics on oxygen partial pressure was investigated at 800° and 850°C. The doping amount of tin was 100–1000 ppm, which is within the solubility limit at the temperatures measured. The conductivity of doped ceramics was independent of , and the carrier concentration was almost the same as the estimated value from the tin content. The conductivity of the pure In2O3 ceramic was proportional to. By considering a singly charged defect cluster of interstitial indium and interstitial oxygen, , the conductivity dependence is deduced to be proportional to. There are large and three adjacent vacant sites, 8a and 16c, in the In2O3 structure to enter indium and oxygen.

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“…A large intersti tial site exists at about (1/8 1/8 1/8) in the lattice. Using a neutron powder diffraction method, Nadaud et al 4) con firmed that ITO has interstitial oxygen ions in this site. Yamada et al5) investigated changes in concentration of the interstitial oxygen around the substituted Sn ion in ITO by Mossbauer spectroscopy.…”

Section: Introductionmentioning

confidence: 99%

Solid Solubility of SnO2 in In2O3.

Ohya

Ito

Kaneko

et al. 2000

J. Ceram. Soc. Japan

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A Structural Study of Tin-Doped Indium Oxide (ITO) Ceramics Using <sup>119</sup>Sn Mössbauer Spectroscopy and Neutron Diffraction

Cited by 21 publications

References 0 publications

Effect of Sputtering Power on Optoelectronic Properties of Iron-Doped Indium Saving Indium-Tin Oxide Thin Films

Effect of Sputtering Power on Optoelectronic Properties of Iron-Doped Indium Saving Indium-Tin Oxide Thin Films

Equilibrium Dependence of the Conductivity of Pure and Tin‐Doped Indium Oxide on Oxygen Partial Pressure and Formation of an Intrinsic Defect Cluster

Solid Solubility of SnO2 in In2O3.

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