A Snapback Suppressed Reverse-Conducting IGBT With a Floating p-Region in Trench Collector

Jiang, Huaping; Zhang, Bo; Chen, Wanjun; Li, Zhaoji; Liu, Chuang; Rao, Zugang; Dong, Bin

doi:10.1109/led.2011.2180357

Cited by 63 publications

(40 citation statements)

References 12 publications

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“…The band to band tunneling injection IGBT realizes the reverse conduction capability by the band to band tunneling mechanism [9,10,11,12,13]. The RC-IGBT with a floating p-region and an oxide trench between the N + short and P + anode [14], which would be referred to as OT-RC-IGBT in this paper. By utilizing the numerical simulation, this paper proposes a simple way to suppress the snapback by introducing the floating field stop layer with a lightly doped p-floating layer.…”

Section: Introductionmentioning

confidence: 99%

“…This paper also proposes a novel structure, which is named recess and floating buffer RC-IGBT (RF-RC-IGBT). Compared to the OT-RC-IGBT structure described in [14], a simple recess configuration is used to replace the oxide trench, and the floating buffer structure is also utilized to suppress the snapback phenomenon and achieve sufficient blocking capability. N-buffer layer.…”

Section: Introductionmentioning

confidence: 99%

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A snapback-free reverse conducting IGBT with recess and floating buffer at the backside

Xie

Wei

et al. 2017

IEICE Electron. Express

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We propose two novel ways to alleviate the reverse conducting insulated gate bipolar transistor (RC-IGBT) snapback phenomenon by introducing the floating field stop layer with a lightly doped p-floating layer and recess structure at the backside. The floating field stop layer is submerged in the N-drift region and located several micrometers above the P + anode region, which would not degrade the blocking capability but can suppress the snapback phenomenon effectively. When the collector length exceeds 100 µm, the snapback voltage ΔV SB of the floating field stop RC-IGBT with the p-floating layer can be less than 0.5 V. Furthermore, the recess structure at the backside can separate the N + short and P + anode region, which will be beneficial to eliminate the snapback. Finally, an RC-IGBT with a floating buffer layer and recess at the backside is proposed. Compared to the RC-IGBT featuring an oxide trench between the N + short and P + anode, the proposed one has utilized the simple recess structure to replace the costly oxide trench and achieved the identical characteristics simultaneously.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

A snapback-free reverse conducting IGBT with recess and floating buffer at the backside

Xie

Wei

et al. 2017

IEICE Electron. Express

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“…The second is that a high forward voltage drop which can increase the conducting energy loss and a non-uniform distributed current which can decrease the conducting capability and reliability are observed. Many methods are adopted to solve these problems, such as by introducing the dual gates [10] which can eliminate the snapback effectively but in needing of extra and complicated fabrication processes, the RC-IGBT with anti-parallel thyristor [11] which an realize uniform current distribution but it can bring in another snapback, and the RC-IGBT with antiparallel NPN transistor [12] which can suppress the snapback but at the loss of the turnoff capability due to the oxide trench collector. In addition, almost all the methods integrate the FWD in the same active region with IGBT.…”

Section: Introductionmentioning

confidence: 99%

A RC-IGBT with built-in free wheeling diode controlled by MOSFET

Chen

Guo

et al. 2017

IEICE Electron. Express

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A reverse-conducting insulated-gate bipolar transistor (RC-IGBT) with integrated Free-Wheeling Diode (FWD) in edge termination region controlled by metal-oxide-semiconductor field-effect transistor (MOSFET) is proposed. The Field Limiting Ring (FLR) of the edge termination acts as the anode and the N-Collector acts as the cathode of the FWD. The MOSFET makes the FLR conduct reverse current at reverse conduction and float at reverse breakdown. Compared with the conventional RC-IGBT, which integrates the FWD in active cell region, the proposed device can eliminate the snapback easily at forward conduction. In addition, the forward voltage drop can be decreased largely.

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“…T HE reverse-conducting insulated gate bipolar transistor (RC-IGBT) is a promising power device, which is a viable alternative to the traditional IGBT in several application areas, especially in low voltage applications [1], [2]. The IGBT and FRD (fast recovery diode) are integrated into a monolithic chip by applying shorted collector (SC) technology, which improves the utilization rate of silicon substrate and reduces the cost for testing and packaging [3]- [5].…”

Section: Introductionmentioning

confidence: 99%

Increase of the Reliability of the Junction Terminations of Reverse-Conducting Insulated Gate Bipolar Transistor by Appropriate Backside Layout Design

Zhang

Yangjun

et al. 2014

IEEE Electron Device Lett.

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In this letter, a novel design concept for the edge termination of reverse-conducting insulated gate bipolar transistor (RC-IGBT) is proposed and evaluated. The new design can be easily realized by backside layout design without additional processes and manufacturing cost. Simulation results show that the proposed method can reduce the total amount of injected holes by 94.6% and 81.5% in the insulated gate bipolar transistor (IGBT) and diode modes, respectively. Thus, the current crowding problem in the edge termination when RC-IGBT device turns OFF in IGBT mode or recovers in diode mode is suppressed.Index Terms-Current crowding, reliability, reverseconducting insulated gate bipolar transistor (RC-IGBT), edge termination.

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A Snapback Suppressed Reverse-Conducting IGBT With a Floating p-Region in Trench Collector

Cited by 63 publications

References 12 publications

A snapback-free reverse conducting IGBT with recess and floating buffer at the backside

A snapback-free reverse conducting IGBT with recess and floating buffer at the backside

A RC-IGBT with built-in free wheeling diode controlled by MOSFET

Increase of the Reliability of the Junction Terminations of Reverse-Conducting Insulated Gate Bipolar Transistor by Appropriate Backside Layout Design

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