Increase of the Reliability of the Junction Terminations of Reverse-Conducting Insulated Gate Bipolar Transistor by Appropriate Backside Layout Design

Zhang, Wenliang; Yangjun, Zhu; Lu, Shengyong; Tian, Xing; Teng, Yuan

doi:10.1109/led.2014.2364301

Cited by 6 publications

(3 citation statements)

References 10 publications

(8 reference statements)

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“…Moreover, the issue of current crowding is another challenge for obtaining a large safe operating area (SOA) in these RC-IGBTs. To eliminate the current-crowding problem, the edge-termination concept [ 12 ] is proposed and evaluated in the RC-IGBT to reduce injected holes into edge termination and avoid the recovery in the diode mode in lieu of the IGBT mode during the turn-off process. The current crowding is partially smoothed by the termination region, but the snapback effect is inevitable in the active region.…”

Section: Introductionmentioning

confidence: 99%

A Novel Concept of Electron–Hole Enhancement for Superjunction Reverse-Conducting Insulated Gate Bipolar Transistor with Electron-Blocking Layer

Wang

Chong

Huang³

2023

Micromachines

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A novel snapback-free superjunction reverse-conducting insulated gate bipolar transistor (SJ-RC-IGBT) is proposed and verified by simulation. In the SJ-RC-IGBT, the parasitic P/N/P/N structure as thyristor or Shockley diode demonstrates large conductivity due to an overabundance of carriers for reverse conduction. By preventing electrons from leaking across the N+ region at the collector side, the extra electron-blocking (EB) layer introduced in the SJ-RC-IGBT can dramatically enhance electron–hole pairs in the N/P-pillars. Hence, the SJ-RC-IGBT demonstrates a low on-state voltage (Von). In addition, snapback-free characteristics and a large safe operating area (SOA) are also achieved in the SJ-RC-IGBT. During the turn-off process, a significant amount of electrons are extracted by parasitic MOS across the EB layer at the collector side to decrease the turn-off loss (Eoff). According to the optimized results, the SJ-RC-IGBT with EB layer obtains an ultralow Eoff of 3.9 mJ/cm2 at Von = 1.38 V with 88% and 81% decreases, respectively, compared with the conventional reverse-conducting IGBT (CRC-IGBT) and superjunction IGBT (SJ-IGBT).

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Section: Introductionmentioning

confidence: 99%

A Novel Concept of Electron–Hole Enhancement for Superjunction Reverse-Conducting Insulated Gate Bipolar Transistor with Electron-Blocking Layer

Wang

Chong

Huang³

2023

Micromachines

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“…Previous publications investigated different techniques to lower the termination region injection and increase device robustness. [18][19][20][21][22][23][24][25][26][27] These include using a lower Collector P+ doping in the termination, completely eliminating Collector P+ from the termination region, eliminating Collector metallisation from the termination, adding an insulating layer between the Collector metal and semiconductor in the termination region, increasing the N-buffer doping in the termination area, adding N+ Collector shorts at the termination and carrier lifetime killing in the termination region as well as designing the transition region with a ballast resistance. [20][21][22] Most of these techniques are disclosed in patents and not many papers have been published which explain in detail the effects of reduced hole injection in the termination area and various trade-offs of its implementation.…”

Section: Introductionmentioning

confidence: 99%

Termination area design for reduced leakage current and improved ruggedness of HV IGBTs

Gao

Jin

Pathirana

et al. 2022

Jpn. J. Appl. Phys.

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A termination design which efficiently reduces leakage current and improves robustness of very high voltage IGBTs (>3.3kV) without adversely affecting other device characteristics is presented here. Proposed design uses a selectively formed Buried N+ layer in the N-buffer under the termination region. Optimised placement of the N+ buried regions reduces carrier modulation in the termination area thus lowering the leakage current and reducing maximum temperature during the Reverse Bias Safe Operating Area (RBSOA) tests. This improves dynamic ruggedness of the IGBT without deteriorating other device characteristics.

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“…In order to improve the power handling capability of the IGBT modules, an attractive approach is to incorporate the FWD and IGBT into a monolithic silicon chip [4]. Such solution has been implemented and then the RC-IGBT appears in the market partly due to the thin-wafer processing technology in recent years [5,6,7,8]. Compared to the conventional IGBT configuration, the RC-IGBT features periodic and alternating N + short region and P + anode region at the backside.…”

Section: Introductionmentioning

confidence: 99%

A snapback-free reverse conducting IGBT with recess and floating buffer at the backside

Xie

Wei

et al. 2017

IEICE Electron. Express

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We propose two novel ways to alleviate the reverse conducting insulated gate bipolar transistor (RC-IGBT) snapback phenomenon by introducing the floating field stop layer with a lightly doped p-floating layer and recess structure at the backside. The floating field stop layer is submerged in the N-drift region and located several micrometers above the P + anode region, which would not degrade the blocking capability but can suppress the snapback phenomenon effectively. When the collector length exceeds 100 µm, the snapback voltage ΔV SB of the floating field stop RC-IGBT with the p-floating layer can be less than 0.5 V. Furthermore, the recess structure at the backside can separate the N + short and P + anode region, which will be beneficial to eliminate the snapback. Finally, an RC-IGBT with a floating buffer layer and recess at the backside is proposed. Compared to the RC-IGBT featuring an oxide trench between the N + short and P + anode, the proposed one has utilized the simple recess structure to replace the costly oxide trench and achieved the identical characteristics simultaneously.

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Increase of the Reliability of the Junction Terminations of Reverse-Conducting Insulated Gate Bipolar Transistor by Appropriate Backside Layout Design

Cited by 6 publications

References 10 publications

A Novel Concept of Electron–Hole Enhancement for Superjunction Reverse-Conducting Insulated Gate Bipolar Transistor with Electron-Blocking Layer

A Novel Concept of Electron–Hole Enhancement for Superjunction Reverse-Conducting Insulated Gate Bipolar Transistor with Electron-Blocking Layer

Termination area design for reduced leakage current and improved ruggedness of HV IGBTs

A snapback-free reverse conducting IGBT with recess and floating buffer at the backside

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