A smear-suppressing CCD imager

This paper describes recent process modifications made to enhance the performance of interline and electron-multiplying charge-coupled-device (EMCCD) image sensors. By use of MeV ion implantation, quantum efficiency in the NIR region of the spectrum was increased by 2×, and image smear was reduced by 6 dB. By reducing the depth of the shallow photodiode (PD) implants, the photodiode-to-vertical-charge-coupled-device (VCCD) transfer gate voltage required for no-lag operation was reduced by 3 V, and the electronic shutter voltage was reduced by 9 V. The thinner, surface pinning layer also resulted in a reduction of smear by 4 dB in the blue portion of the visible spectrum. For EMCCDs, gain aging was eliminated by providing an oxide-only dielectric under its multiplication phase, while retaining the oxide-nitride-oxide (ONO) gate dielectrics elsewhere in the device.

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“…Image quality was also improved by reducing image smear [ 9 ], as shown below in Figure 12 . This was accomplished in two ways.…”

Section: Reduced Image Smearmentioning

confidence: 99%

Recent Enhancements to Interline and Electron Multiplying CCD Image Sensors

Stevens

Clayhold

Doan

et al. 2017

Sensors

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The effects of smear on antiblooming protection and dynamic range of interline CCD image sensors

Stevens

Lee

Burkey

1992

IEEE Trans. Electron Devices

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1/2-in 768(H)*492(V) pixel CCD image sensor

Oda

Orihara

Tanaka

et al. 1989

IEEE Trans. Electron Devices

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EIJI ODA, KOZO ORIHARA, TAKANORI TANAKA, TAKA0 KAMATA, A N D YASUO ISHIHARA Ahstruct-A I /2-in format 768 ( H ) X 492 ( V ) pixel interline CCD image sensor has heen developed. Unit cell dimensions are as small as 8 . 4 ( H ) X 9 . 8 ( V ) pni. In order to realize such a high-density device, novel technologies have been developed, i.e., 1) dual-channel horizontal CCI) registers, 2) single p-well vertical overflow drain, 3) high-capacitance p-well structure, and 4) inverted-LOCOS channel isolation process. A horizontal resolution of more than 500 TV lines has heen obtained. Maximuni signal charge for the vertical CCD register is as much as 1.5 X 10' electrons, corresponding to 270-nA output current, in spite of the 1.8-pm mask width narrnw-channel vertical CCI) register. The total random noise is less than 20 electrons after correlated douhle sampling. Then, the dynamic range reaches 77 dB. The photosensitivity is 0.092 pA/pN'. Experimental results also show that the technologies used here are effective for realizing a future-use high-definition CCD image sensor.

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A smear-suppressing CCD imager

Cited by 10 publications

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Recent Enhancements to Interline and Electron Multiplying CCD Image Sensors

Recent Enhancements to Interline and Electron Multiplying CCD Image Sensors

The effects of smear on antiblooming protection and dynamic range of interline CCD image sensors

1/2-in 768(H)*492(V) pixel CCD image sensor

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