1992
DOI: 10.1109/16.163449
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The effects of smear on antiblooming protection and dynamic range of interline CCD image sensors

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Cited by 5 publications
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“…Its main cause is a lateral diffusion of charges between the photosensor and the CCD shift register, but it is also caused by light piping underneath or directly through the light shields that may cover these registers. [7][8][9] Although interpixel capacitance and smear are caused by different physical processes related to two different technology platforms (hybrid CMOS and CCD, respectively), they are jointly symbolized here by one coupling capacitance C c . In literature, however, C c is usually related to interpixel capacitance only.…”
Section: Sensor Interpixel Correlationmentioning
confidence: 99%
“…Its main cause is a lateral diffusion of charges between the photosensor and the CCD shift register, but it is also caused by light piping underneath or directly through the light shields that may cover these registers. [7][8][9] Although interpixel capacitance and smear are caused by different physical processes related to two different technology platforms (hybrid CMOS and CCD, respectively), they are jointly symbolized here by one coupling capacitance C c . In literature, however, C c is usually related to interpixel capacitance only.…”
Section: Sensor Interpixel Correlationmentioning
confidence: 99%