Recent Enhancements to Interline and Electron Multiplying CCD Image Sensors

Stevens, Eric G.; Clayhold, J. A.; Doan, Hung Q.; Fabinski, Robert P.; Hynecek, Jaroslav; Kosman, Stephen L.; Parks, C.

doi:10.3390/s17122841

Cited by 8 publications

(8 citation statements)

References 8 publications

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“…Second, in the application, it is necessary to fit N (j) from the original image O (i, j) and then subtract it from O (i, j) to obtain I (i, j) representing the optical signal, which is calculated as follows. Accumulate (13) in the column direction as…”

Section: B Mathematical Theorymentioning

confidence: 99%

“…Some semiconductor processes and pixel structure designs that suppress the smear effect provide significant references for sensor development. Optimizations for P-N junctions can effectively reduce charge diffusion in the p-well below the photodiode [11], [12], [13], [14]. Moreover, double layer design and material replacement of the light shield can further avoid light penetration [7], [8], [15], [16].…”

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confidence: 99%

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Analysis and Correction of Smeared Image From Interline-Transfer CCD in Beam Quality Measurement

et al. 2022

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The smear effect caused by light penetration of interline-transfer (IT) CCD in beam quality measurement (BQM) is detrimental and not analyzed pertinently. This report proposes a mathematical model and a correction method for the smeared image. The smear noise is fitted and subtracted through its correlation with the light signal obtained from the model and pre-calibration. The application in BQM is presented by measuring beam quality factor M 2 and power in the bucket (PIB). The results verify the validity of the method. An evaluation standard of the correction effect is also recommended. Index Terms-Charge-coupled-device (CCD) image sensor, interline transfer (IT), laser beams. I. INTRODUCTION C CD sensors are widely used in beam quality measurement (BQM) to image the cross-section spot and reproduce its intensity distribution [1], [2], [3], [4]. Interline-transfer (IT) CCD is one of the most typical structures. Its signal charges are transferred from the photodiode to the vertical CCD (V-CCD) after the photosensitivity, then enter the horizontal CCD (H-CCD) for amplification and readout [5]. IT-CCD has a balanced performance in terms of high frame rate, imaging quality and sensitivity [6], [7], [8]. The smear effect is a common error source for IT-CCD, which is caused by light penetration through the light shield on VCCD, light leakage from diffraction, refraction, and waveguide effect on CCD surface, or charge diffusion during signal transfer in V-CCD [9], [10]. Generally, it appears as vertical line noise across the image.

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Section: B Mathematical Theorymentioning

confidence: 99%

mentioning

confidence: 99%

Analysis and Correction of Smeared Image From Interline-Transfer CCD in Beam Quality Measurement

et al. 2022

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“…EMCCD ageing is a known factor that affects several device characteristics and manifests as a decrease in gain during the operational period. It has been hypothesised that this decrease in gain is due to holes becoming trapped beneath the DC gate electrode in the gain register [14] or attributed to damage to the gate dielectric by hot electrons during device operation [15]. Previous research has been primarily restricted to traditional EMCCDs and has demonstrated an approximately logarithmic decrease of gain with time [16].…”

Section: Emccd Ageingmentioning

confidence: 99%

Ageing and proton irradiation damage of a low voltage EMCCD in a CMOS process

2018

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Electron Multiplying Charge Coupled Devices (EMCCDs) have revolutionised low light level imaging, providing highly sensitive detection capabilities. Implementing Electron Multiplication (EM) in Charge Coupled Devices (CCDs) can increase the Signal to Noise Ratio (SNR) and lead to further developments in low light level applications such as improvements in image contrast and single photon imaging. Demand has grown for EMCCD devices with properties traditionally restricted to Complementary Metal-Oxide-Semiconductor (CMOS) image sensors, such as lower power consumption and higher radiation tolerance. However, EMCCDs are known to experience an ageing effect, such that the gain gradually decreases with time. This paper presents results detailing EM ageing in an Electron Multiplying Complementary Metal-Oxide-Semiconductor (EMCMOS) device and its effect on several device characteristics such as Charge Transfer Inefficiency (CTI) and thermal dark signal. When operated at room temperature an average decrease in gain of over 20% after an operational period of 175 hours was detected. With many image sensors deployed in harsh radiation environments, the radiation hardness of the device following proton irradiation was also tested. This paper presents the results of a proton irradiation completed at the Paul Scherrer Institut (PSI) at a 10 MeV equivalent fluence of 4.15×10 10 protons/cm 2. The pre-irradiation characterisation, irradiation methodology and post-irradiation results are detailed, demonstrating an increase in dark current and a decrease in its activation energy. Finally, this paper presents a comparison of the damage caused by EM gain ageing and proton irradiation.

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“…This is relevant when considering EMCCDs device, which experience an additional damage process called ageing [10]. This process demonstrates as a decrease in the EM gain over the operating period of the device and has been attributed to charge trapping beneath the DC gate [11]. Traps are known to play a pivotal role in increasing the CTI, and there has been considerable interest in the nature of traps formed by radiation damage and subsequent effect on the charge transfer efficiency [12].…”

Section: Charge Transfer Efficiencymentioning

confidence: 99%

The operational characteristics and potential applications of a low voltage EMCCD in a CMOS process

Dunford¹,

Stefanov²,

Holland³

2018

High Energy, Optical, and Infrared Detectors for Astronomy VIII

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The Electron Multiplying Test Chip 1 (EMTC1) was developed with the aim of creating a device which could produce superior Electron Multiplication (EM) gain at a greatly reduced voltage. An EM gain exceeding 3% per stage has been recorded for a relatively low voltage (~13.0V) from two recently developed pixel structures. An electro-optical characterisation of the EMTC1 is presented focusing on charge transfer via experimental and simulation results aiming to provide insight into the transfer and multiplication process. The Charge Transfer Inefficiency (CTI) is analysed with the aim of providing a greater understanding of the charge transfer process. Light starved applications such as Earth observation and automated inspection are known to benefit from Time Delay Integration (TDI) and electron multiplication. Though traditionally implemented in CCDs, implementing TDI in CMOS technology can lead to an increase of functionality, higher readout speeds and reduced noise. This paper presents a discussion of the implication of these results on the potential applications of this sensor.

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Recent Enhancements to Interline and Electron Multiplying CCD Image Sensors

Cited by 8 publications

References 8 publications

Analysis and Correction of Smeared Image From Interline-Transfer CCD in Beam Quality Measurement

Analysis and Correction of Smeared Image From Interline-Transfer CCD in Beam Quality Measurement

Ageing and proton irradiation damage of a low voltage EMCCD in a CMOS process

The operational characteristics and potential applications of a low voltage EMCCD in a CMOS process

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