A single phase semiconducting Ca-silicide film growth by sputtering conditions, annealing temperature and annealing time

Yang, Yinye; Quan, Xie

doi:10.1007/s10853-009-3529-1

Cited by 7 publications

(1 citation statement)

References 15 publications

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“…Even though it is difficult to grow a single phase of the AEM-Si system, new techniques for the growth are successfully developing, which draws closer the possibility of using the materials in electronics. For example, Yinye et al reported a new method of growing semiconducting Ca 2 Si films [15]. With the new method they were able to avoid simultaneous growth of Ca 2 Si and CaSi, which is a more stable phase among the two.…”

Section: Introductionmentioning

confidence: 99%

Half-metallic properties of the (1 1 0) surface of alkali earth metal monosilicides in the zinc blende phase

Białek

Lee

2011

Semicond. Sci. Technol.

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An all electron ab initio method was employed to study the electronic and magnetic properties of the (1 1 0) surface of alkaline-earth metal silicides: CaSi, SrSi and BaSi, in the zinc blende structure. The three surfaces are found to conserve the half-metallic properties of their bulk structures with a wide semiconducting energy gap in the spin-up channel. Half-metallic energy gap at the surfaces is small. In the CaSi surface it is of the order of k B T , which indicates that in the CaSi (1 1 0) a transition to a metallic state is possible due to temperature fluctuations. At the same time, the CaSi surface exhibits the strongest magnetic properties with 0.91 μ B magnetic moment on the Si atom in the topmost layer and 0.21 μ B magnetic moment on the Ca atom. In each of the three surfaces we observe a reduction of magnetic moments on the atoms in the subsurface layer and the enhancement of the magnetic moment on the atoms in the topmost layer, as compared with the properties of atoms in the bulk. An analysis of the calculated total and atom projected densities of states leads to a conclusion that the surface effects in the structures are short-range phenomena.

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Section: Introductionmentioning

confidence: 99%