2019
DOI: 10.1587/elex.16.20190208
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A single event upset tolerant latch with parallel nodes

Abstract: A single event upset (SEU) tolerant latch has been put forward in the current paper. By means of the parallel nodes structure design together with the layout-level optimization design, the proposed design is capable of substantially improving the immunity to SEU. In comparison with the conventional latch, the stacked latch with isolation and the dualmodular-redundancy (DMR) latch with C-element, the simulation results based on the 65 nm CMOS process demonstrate that the proposed latch performs much better in S… Show more

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Cited by 5 publications
(7 citation statements)
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References 30 publications
(45 reference statements)
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“…To tolerate node upsets, in recent years, researchers proposed many designs, such as memory cells [4][5], flip-flops [6][7], and latches [8][9][10][11][12][13][14][15][16][17][18][19][20][21]. Although most of the existing latch designs are hardened against node upsets, they still suffer from severe problems.…”
Section: Introductionmentioning
confidence: 99%
See 1 more Smart Citation
“…To tolerate node upsets, in recent years, researchers proposed many designs, such as memory cells [4][5], flip-flops [6][7], and latches [8][9][10][11][12][13][14][15][16][17][18][19][20][21]. Although most of the existing latch designs are hardened against node upsets, they still suffer from severe problems.…”
Section: Introductionmentioning
confidence: 99%
“…Although most of the existing latch designs are hardened against node upsets, they still suffer from severe problems. First, some latch designs [8][9][12][13] are only SNU-tolerant, which means that any of them has at least one node-pair that cannot effectively tolerate a 2NU. Second, some latch designs [10][11][14][15][16][17] are 2NU-tolerant.…”
Section: Introductionmentioning
confidence: 99%
“…To mitigate SNUs and DNUs, radiation hardening by design (RHBD) is a widely employed approach. Using RHBD, many novel storage elements, such as latches [5][6][7][8], static random access memories (SRAMs) [9][10][11][12], and flip-flops (FFs) [13][14][15][16][17][18][19]23] have been proposed. Among them, dual-interlocked storage-cells (DICEs) are widely used [20].…”
Section: Introductionmentioning
confidence: 99%
“…To mitigate SNUs, DNUs, TNUs, and/or SETs, by means of radiation-hardening-by-design (RHBD) approaches, many hardened storage cells such as static random access memories (SRAMs) [9][10][11][12], flip-flops [13][14][15][16], and latches [5][6][7][8][17][18][19][20][21][22][23][24][25][26][27], have been proposed. This paper focuses on latches.…”
Section: Introductionmentioning
confidence: 99%
“…1) They cannot provide complete TNU-tolerability [17][18][19][20][21][22][23][24][25][26] since there is at least one counterexample that an invalid value will be retained if any of them suffers from a TNU. 2) They cannot provide SET-filterability [5-8, 17-18, 21, 23-27] since SETs can unfortunately propagate to the output from the input for any of them.…”
Section: Introductionmentioning
confidence: 99%