A single-crystal Si-resonator with on-chip readout amplifier in standard CMOS

Bertz, A.; Symanzik, H.; Steiniger, Carmen; Höffer, A.; Griesbach, Karoline; Stegemann, K.-H.; Ebest, G.; Geßner, Thomas

doi:10.1016/s0924-4247(01)00650-1

Cited by 6 publications

(2 citation statements)

References 5 publications

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“…In addition, there is an increasing need for integrating microstructures with electronics for amplification and processing of signals at the point of measurement and for communicating with external systems in intelligent microsystems [6,13]. Monolithic integration usually requires post-IC fabrication of microstructures on a chip containing CMOS circuitry.…”

Section: Introductionmentioning

confidence: 99%

Use of a photoresist sacrificial layer with SU-8 electroplating mould in MEMS fabrication

Song

Ajmera

2003

J. Micromech. Microeng.

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In this paper, new processes have been developed to fabricate micromechanical components and systems that utilize two different photoresists (Shipley S1813 and Hoechst AZ P4620) as sacrificial layers in conjunction with SU-8 photoresist used as an electroplating mould. The use of photoresists as sacrificial layers offers several advantages including reduction in processing steps and hence processing cost. However, the normal sacrificial layer photoresist processing cycle fails when used in conjunction with SU-8 photoresist. The latter is often used as an electroplating mould, especially for high-aspect ratio or tall microstructures in MEMS fabrication. In this paper, problems arising in the use of a photoresist sacrificial layer are discussed and new sacrificial layer processes are developed. New curing temperatures for photoresist sacrificial layers are determined, which prevent damage that otherwise occurs from the use of SU-8 as an electroplating mould. New hard baking temperatures determined are 175 °C and 200 °C for S1813 and AZ P4620 photoresist processes, respectively. A comb drive structure is utilized to demonstrate these new fabrication processes.

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Section: Introductionmentioning

confidence: 99%

Use of a photoresist sacrificial layer with SU-8 electroplating mould in MEMS fabrication

Song

Ajmera

2003

J. Micromech. Microeng.

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“…Sensing elements such as comb drives along with on-chip circuitry have been added to many micro/nanofabricated silicon-based NEMS/MEMS resonators to overcome the parasitics. 11,12 These systems involve intricate multielement designs which may increase the cost of production and probability for breakdown. Accordingly, individual cantilever structures which make up the simplest MEMS/NEMS structures that can be easily machined and mass produced 13 would be ideal.…”

Section: Introductionmentioning

confidence: 99%

Electrical detection of oscillations in microcantilevers and nanocantilevers

Gaillard

Skove

Ciocan

et al. 2006

Review of Scientific Instruments

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Precise determination of the resonant frequency, phase, and quality factor in micromechanical and nanomechanical oscillators would permit, among other things, (i) the detection of trace amounts of adsorbed molecules through a shift in the resonant frequency, and (ii) pressure variations in the environment which affect the mechanical damping of the oscillator. The major difficulty in making these measurements in many cases is the ancillary equipment such as lasers or high magnetic fields that must be used. Being able to make precise measurements with a fully electrical actuation and detection method would greatly extend the usefulness of these oscillators. Detecting the oscillation through changes in the capacitance between the oscillator and a counter electrode is difficult because the static capacitance between them as well as the parasitic capacitance of the rest of the circuitry overwhelm the detection. We have found that the charge on a microcantilever or nanocantilever when driven by a nearby counter electrode contains higher harmonics of the driving signal with appreciable amplitude. This allows detection at frequencies well removed from the driving frequency, which increases the signal to background ratio by approximately three orders of magnitude. With this method, we show clear electrical detection of mechanical oscillations in ambient conditions for two systems: Si-based microcantilevers and multiwalled carbon nanotube based nanocantilevers.

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