A single-atom transistor

Fuechsle, Martin; Miwa, Jill A.; Mahapatra, S.; Ryu, Hoon; Lee, Sunhee; Warschkow, Oliver; Hollenberg, Lloyd C. L.; Klimeck, Gerhard; Simmons, M. Y.

doi:10.1038/nnano.2012.21

Cited by 824 publications

(849 citation statements)

References 29 publications

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“…Scanning probe lithography experiments have provided striking examples of its capabilities such as the ability to pattern 3D structures with nanoscale features 4 , the fabrication of the smallest field-effect transistor 5 or the patterning of proteins with 10 nm feature size 6 . Figure 1a shows a general scheme of SPL operation.…”

Section: Published Inmentioning

confidence: 99%

“…In this way clean and H-passivated regions on the surface have been produced. The chemical contrast between those regions has been combined to fabricate the smallest lithographically engineered electron devices 5,[57][58] The electric field at the tip-surface interface can invert the polarization of a small region in a ferroelectric film. This generates a nonvolatile ferroelectric domain.…”

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confidence: 99%

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Advanced scanning probe lithography

2014

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The nanoscale control afforded by scanning probe microscopes has prompted the development of a wide variety of scanning probe-based patterning methods. Some of these methods have demonstrated a high degree of robustness and patterning capabilities that are unmatched by other lithographic techniques. However, the limited throughput of scanning probe lithography has prevented their exploitation in technological applications. Here, we review the fundamentals of scanning probe lithography and its use in materials science and nanotechnology. We focus on the methods and processes that offer genuinely lithography capabilities such as those based on thermal effects, chemical reactions and voltage-induced processes. Published in:Nature Nanotechnology 9, 577-587 (2014) Progress in nanotechnology depends on the capability to fabricate, position, and interconnect nanometre-scale structures. A variety of materials and systems such as nanoparticles, nanowires, two-dimensional materials like graphene and transition metal dichalcogenides, plasmonics materials, conjugated polymers and organic semiconductors are finding applications in nanoelectronics, nanophotonics, organic electronics and biomedical applications. The success of many of the above applications relies on the existence of suitable nanolithography approaches. However, patterning materials with nanoscale features aimed at improving integration and device performance poses several challenges. The limitations of conventional lithography techniques related to resolution, operational costs and lack of flexibility to pattern organic and novel materials have motivated the development of unconventional fabrication methods [1][2][3] .Since the first patterning experiments performed with a scanning probe microscope in the late 80s, scanning probe lithography (SPL) has emerged as an alternative lithography for academic research that combines nanoscale feature-size, relatively low technological requirements and the ability to handle soft matter from small organic molecules to proteins and polymers. Scanning probe lithography experiments have provided striking examples of its capabilities such as the ability to pattern 3D structures with nanoscale features 4 , the fabrication of the smallest field-effect transistor 5 or the patterning of proteins with 10 nm feature size 6 . Figure 1a shows a general scheme of SPL operation. There is a variety of approaches to modify a material in a probe-surface interface which have generated several SPL methods. Scanning probe lithographies can be either classified by emphasizing the distinction between the general nature of the process, chemical versus physical, or by considering if SPL implies the removal or addition of material. However, we consider it is more inclusive and systematic to classify the different SPL methods in terms of the driving mechanisms used in the patterning process, namely thermal, electrical, mechanical and diffusive methods (Fig. 1b). Challenges in nanoscale lithographyThe workhorse of large volume CMOS fabrication, o...

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Section: Published Inmentioning

confidence: 99%

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Advanced scanning probe lithography

2014

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“…These coulomb islands can be constructed from metal nanowires, 2,3 nanoparticles, 4,5 or even single atoms. 6 Some researchers have studied single-dot SETs analytically using an orthodox model that is governed by both tunneling rates and master equations. [7][8][9] The geometrical structures of SETs with single-island systems are considered strongly correlated with their electrical properties.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of single-electron transistors with electromigrated Ni nanogaps

2018

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We analyze single-electron transistors (SETs) fabricated with electromigrated Ni nanogaps using the Korotkov and Nazarov (KN) model. First, we investigate nanogap-based SETs consisting of multiple Ni islands placed between the source and drain electrodes by a field-emission-induced electromigration technique known as “activation.” After the activation procedure is performed using a preset current Is of 3 μA, the drain current-drain voltage characteristics of SETs with single-island structures are obtained and analyzed by using the KN model and considering the offset charges on the islands. We determine the fitting parameters obtained by the KN model from the electrical properties of the SETs. The parameters can be explained using the geometrical structures of the SETs that are observed in both scanning electron and atomic force microscopy images after the activation procedure. This approach allows the electrical and structural properties of the single-island structures of the SETs fabricated using the activation method to be determined.

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“…Recent advances in atomic-scale lithography have allowed the realization of a single atom transistor [1], achieved by deterministically placing a single P dopant with atomic precision between planar phosphorus doped leads. This controlled positioning of individual P dopants comprises a significant advance in the fabrication of quantum computer architectures in silicon [2,3], in which P donors naturally form spin qubits.…”

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confidence: 99%

“…After dosing with phosphine gas which only adsorbs to the exposed parts of the Si surface, phosphorus atoms are incorporated into the silicon crystal using a 60 s anneal to 330° C. The whole device is then encapsulated with ~30 nm of epitaxial silicon at 250° C and a growth rate of ~0.15 nm/min [17]. To ensure the deterministic incorporation of a single P atom, we desorb three adjacent Si dimers [1] (see inset of Fig. 1a) and note that spurious single dangling bonds in close proximity to the donor site cannot incorporate another P dopant [18].…”

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confidence: 99%