Quantum dot spectroscopy using a single phosphorus donor

Büch, Holger; Fuechsle, Martin; Baker, William J.; House, Matthew; Simmons, M. Y.

doi:10.1103/physrevb.92.235309

Cited by 13 publications

(12 citation statements)

References 30 publications

(33 reference statements)

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“…Nanoscale P sheets ( 4 ), wires ( 5 ), and dots ( 6 ) have all been fabricated. These buried nanoscale structures challenge techniques aimed at determining electrical and geometrical properties of subsurface devices.…”

Section: Introductionmentioning

confidence: 99%

“…Over the last decade, the technique of hydrogen resist lithography, which uses a scanning tunneling microscope (STM) to pattern a hydrogen passivation layer, has proved ideal for the definition of laterally confined atomically thin two-dimensional (2D) phosphorus (P) dopant nanostructures. Nanoscale P sheets ( 4 ), wires ( 5 ), and dots ( 6 ) have all been fabricated. These buried nanoscale structures challenge techniques aimed at determining electrical and geometrical properties of subsurface devices.…”

Section: Introductionmentioning

confidence: 99%

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Nondestructive imaging of atomically thin nanostructures buried in silicon

et al. 2017

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Nondestructive imaging of atomically thin nanostructures buried in silicon

et al. 2017

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“…[23]. The expressions of the noise field spectra and the parameter estimations based on experiments [23,35,36] are also included in the Supplementary. Fig.…”

Section: Resultsmentioning

confidence: 99%

“…C is estimated based on Ref. [36], where the donor-gate capacitance is 0.6 aF for a separation ∼35 nm. Therefore, C in this work is evaluated as 35nm/65nm • 0.36aF = 0.17aF .…”

Section: Supplementarymentioning

confidence: 99%

All-electrical control of donor-bound electron spin qubits in silicon

Wang,

Chen,

Klimeck

et al. 2017

Preprint

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We propose a method to electrically control electron spins in donor-based qubits in silicon. By taking advantage of the hyperfine coupling difference between a single-donor and a two-donor quantum dot, spin rotation can be driven by inducing an electric dipole between them and applying an alternating electric field generated by in-plane gates. These qubits can be coupled with exchange interaction controlled by top detuning gates. The qubit device can be fabricated deep in the silicon lattice with atomic precision by scanning tunneling probe technique. We have combined a large-scale full band atomistic tight-binding modeling approach with a time-dependent effective Hamiltonian description, providing a design with quantitative guidelines.

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“…55, a simple and novel silicon donor nanostructure design for scanning tunneling microscopy (STM) mode was introduced to quantify the resolution limit of sMIM. The doping pattern is buried under a protective silicon cap by a 10 nm highly conductive silicon line and imaged with sMIM, which is an ideal test for the resolution and sensitivity of sMIM technology because it is made in nm resolution and can reduce the complexity caused by terrain convolution [56][57][58]. sMIM has been identified as an excellent platform for studying buried donor structures, opening up a field of research with further advantages of this technology, such as monotonic signal response.…”

Section: Improvement Of Scanning Microwave Impedance Microscopymentioning

confidence: 99%

Developments and Recent Progresses in Microwave Impedance Microscope

et al. 2020

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Microwave impedance microscope (MIM) is a near-field microwave technology which has low emission energy and can detect samples without any damages. It has numerous advantages, which can appreciably suppress the common-mode signal as the sensing probe separates from the excitation electrode, and it is an effective device to represent electrical properties with high spatial resolution. This article reviews the major theories of MIM in detail which involve basic principles and instrument configuration. Besides, this paper summarizes the improvement of MIM properties, and its cutting-edge applications in quantitative measurements of nanoscale permittivity and conductivity, capacitance variation, and electronic inhomogeneity. The relevant implementations in recent literature and prospects of MIM based on the current requirements are discussed. Limitations and advantages of MIM are also highlighted and surveyed to raise awareness for more research into the existing near-field microwave microscopy. This review on the ongoing progress and future perspectives of MIM technology aims to provide a reference for the electronic and microwave measurement community.

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Quantum dot spectroscopy using a single phosphorus donor

Cited by 13 publications

References 30 publications

Nondestructive imaging of atomically thin nanostructures buried in silicon

Nondestructive imaging of atomically thin nanostructures buried in silicon

All-electrical control of donor-bound electron spin qubits in silicon

Developments and Recent Progresses in Microwave Impedance Microscope

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