Fabrication of single-electron transistors with electromigrated Ni nanogaps

Ito, Mitsuki; Yagi, Mamiko; Shirakashi, Jun–ichi

doi:10.1063/1.5031822

Cited by 5 publications

(1 citation statement)

References 22 publications

(27 reference statements)

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“…The most used SET implementation methods are shadow evaporation [26][27][28][29], scanning probe microscope tip modification [30,31], electromigration [32][33][34], nanoscale oxidation [35,36] and mechanically controlled break junction formation [37,38]. By the advance of nanofabrication processes and technology the use of nanoscale objects like nanoparticles [39][40][41][42][43][44], nanotubes [45][46][47], fullerenes [48,49] and single-molecules [20,50] as nano-islands for SET devices has been demonstrated.…”

Section: Introductionmentioning

confidence: 99%

Direct-write single electron transistors by focused electron beam induced deposition

et al. 2019

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Single-electron transistor (SET) device fabrication for operation in the tens of Kelvin range is still challenging due to the need of controlled definition of the metallic island with a diameter far below 100 nm and proper tuning of the island’s tunnel couplings to the drain and source leads. Here we present results on SET device fabrication using focused electron beam induced deposition (FEBID) for island definition between pre-fabricated SET electrode structures. The island’s nano-granular microstructure allows us, in conjunction with in situ tuning of the inter-grain tunnel coupling by post-growth electron irradiation, to study the effect of the island’s electronic granularity on SET device performance. In addition we show that for reliable SET operation FEBID-associated co-deposit in proximity of the island has to be removed which can be accomplished by a novel in situ Ar ion etching process. For the low-temperature properties of functioning SET devices we obtain good agreement of capacitance values deduced from the current–voltage characteristics and capacitance calculations based on the geometry of the device electrodes and the microstructure of the island. Complementary simulations of the SET current–voltage characteristics based on the master equation approach are in good agreement with the experimental data. The observation of well-defined Coulomb oscillations indicates that FEBID-based SET structures can be useful as on-demand charge monitor devices with high lateral positioning flexibility.

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Section: Introductionmentioning

confidence: 99%

Direct-write single electron transistors by focused electron beam induced deposition

et al. 2019

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Coulomb Blockade Effect through Single Electron Tunneling Method in Cylindrical Gate Organic Light Emitting Transistor Configuration

Ojha

Kumar

2021

Silicon

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Simultaneous arrayed formation of single-electron transistors using electromigration in series-connected nanogaps

et al. 2018

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A field-emission-induced electromigration method (activation) is reported for integrating single-electron transistors operating at T = 298 K. The field emission currents between the two opposite electrodes of each series-connected nanogap are tuned to accumulate Ni atoms within the gaps. For ten series-connected nanogaps, the resistance (VD/ID), obtained using the current-voltage (ID-VD) properties of these nanogaps during the activation procedure, is observed to decrease on activation. As a result, island structures are formed within the gaps, and the nanogap-based single-electron transistors can be integrated, when atom migration occurs at the tip of each nanogap electrode. After activating the ten series-connected nanogaps with a preset current, IS = 1 nA, current suppression (representative of coulomb blockade) is not observed in the fabricated devices. On the other hand, coulomb blockade, which depicts the charging and discharging of the nanoislands, can be observed at room temperature, after activation with a preset current, IS = 150 nA. Furthermore, the modulation properties of the coulomb blockade voltage by the gate voltage are also determined at room temperature. These results experimentally demonstrate the arrayed formation of ten single-electron transistors operating at room temperature, constituting a significant step toward the practical realization of single-electron-transistor-based systems.

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Fabrication of single-electron transistors with electromigrated Ni nanogaps

Cited by 5 publications

References 22 publications

Direct-write single electron transistors by focused electron beam induced deposition

Direct-write single electron transistors by focused electron beam induced deposition

Coulomb Blockade Effect through Single Electron Tunneling Method in Cylindrical Gate Organic Light Emitting Transistor Configuration

Simultaneous arrayed formation of single-electron transistors using electromigration in series-connected nanogaps

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