4-and 8-level diffractive optical elements (DOEs) are fabricated in silicon using electron beam lithography and reactive ion etching (RIE). An f/l.9, 1mm diameter, 4-phase-level, reflective, off-axis, imaging DOE is fabricated for use in a free-space optical interconnect. The absolute first order efficiency of the DOE is 73%. 8-level linear gratings are fabricated to determine processing tolerances for DOEs with first order diffraction efficiencies greater than 90%.
DOE DESIGN FOR A REFLECTIVE FREE-SPACE INTERCONNECT ARCHITECTUREA focusing, reflective DOE was designed to image a 4x4 array of GaAsP LEDs1 onto a 4x4 array of metal-semiconductor-metal silicon photodetectors2. The operation of these components demonstrates a simple free-space interconnect architecture for use in stacked multi-chip modules (MCMs). Although the design of transmissive architectures is more common35, the use of a reflective geometry offers several advantages for both the MCM and DOE fabrication. Advantages for the MCM include patterned chips on a single side, the use of electrically active chips that face the same direction, and the use of semiconductor device substrates that are not required to be optically transparent. Advantages in the fabrication of reflective DOEs include buried diffractive and reflective surfaces6, shallower etched features, the ability to use the optic without an anti-reflection coating, and a decoupled substrate volume from the optics, which allows for the use of standard silicon processing techniques for the fabrication of the DOE7.The intersection of the plane of the optic with the family of confocal ellipsoids with foci at the desired object and image points, defines the phase zones of the DOE. The object and image points of the grating are taken to be the centers of the LED and photodetector arrays, respectively. The center of each phase zone is the point on the substrate where specular reflection connects the object and image points. This distance between object and image points through the specular point of the grating is defined as the specular distance. A schematic representation of the DOE is shown in figure l.The DOE is designed to he asymmetric in the x direction. This allows for off..axis operation which is necessary for reflective architectures which do not use beamsplitters. The DOE is symmetric in the y direction. Also shown are the O8194-15200/94/$6.OO SPIE Vol. 2216 / 189 Downloaded From: http://proceedings.spiedigitallibrary.org/ on 06/27/2016 Terms of Use: http://spiedigitallibrary.org/ss/TermsOfUse.aspx