A simple method to characterize the afterpulsing effect in single photon avalanche photodiode

Yen, Hao-Ting; Lin, Sheng Di; Tsai, Cheng‐Ting

doi:10.1063/1.2968434

Cited by 12 publications

(7 citation statements)

References 12 publications

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“…The characteristic decay of the afterpulse probability was sometimes thought to depend on the deep level in which the charge is trapped. Initial models 10 , 16 , 18 , 22 , 23 considered the decay from several distinct deep levels and proposed the “multiple exponential model” where the afterpulsing probability ( P exp ( t )) at a time t is given by: where τ k and A k is the de-trapping lifetime and amplitude factor for the k th deep level, and d is the offset due to noise counts.…”

Section: Canonical Models Of Afterpulsingmentioning

confidence: 99%

Comparative study of afterpulsing behavior and models in single photon counting avalanche photo diode detectors

Ziarkash

Joshi

Stipčević

et al. 2018

Sci Rep

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Single-photon avalanche diode (SPAD) detectors, have a great importance in fields like quantum key distribution, laser ranging, florescence microscopy, etc. Afterpulsing is a non-ideal behavior of SPADs that adversely affects any application that measures the number or timing of detection events. Several studies based on a few individual detectors, derived distinct mathematical models from semiconductor physics perspectives. With a consistent testing procedure and statistically large data sets, we show that different individual detectors - even if identical in type, make, brand, etc. - behave according to fundamentally different mathematical models. Thus, every detector must be characterized individually and it is wrong to draw universal conclusions about the physical meaning behind these models. We also report the presence of high-order afterpulses that are not accounted for in any of the standard models.

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Section: Canonical Models Of Afterpulsingmentioning

confidence: 99%

Comparative study of afterpulsing behavior and models in single photon counting avalanche photo diode detectors

Ziarkash

Joshi

Stipčević

et al. 2018

Sci Rep

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“…Recently, different fitting methods have been studied that employ a broad distribution of different exponential components instead of summating a few dominant discrete ones [26,27]. So far, most studies on the afterpulsing effect just have focused on its time-dependent probability distribution ignited by a single light pulse and do not discriminate the situation of a single ignition avalanche from that with multiple avalanches [12,[28][29][30][31]. However, this is not the real situation when the SPAD works continuously for photon detection.…”

Section: A Trapped Carriers and Afterpulsingmentioning

confidence: 99%

Non-Markovian Property of Afterpulsing Effect in Single-Photon Avalanche Detector

Wang

Chen

et al. 2016

J. Lightwave Technol.

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The single-photon avalanche photodiode(SPAD) has been widely used in research on quantum optics. The afterpulsing effect, which is an intrinsic character of SPAD, affects the system performance in most experiments and needs to be carefully handled. For a long time, afterpulsing has been presumed to be determined by the pre-ignition avalanche. We studied the afterpulsing effect of a commercial InGaAs/InP SPAD (The avalanche photodiode model is: Princeton Lightwave PGA-300) and demonstrated that its afterpulsing is non-Markovian, with a memory effect in the avalanching history. Theoretical analysis and experimental results clearly indicate that the embodiment of this memory effect is the afterpulsing probability, which increases as the number of ignition-avalanche pulses increase. This conclusion makes the principle of the afterpulsing effect clearer and is instructive to the manufacturing processes and afterpulsing evaluation of high-count-rate SPADs. It can also be regarded as a fundamental premise to handle the afterpulsing signals in many applications, such as quantum communication and quantum random number generation.

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“…This is achieved using avalanche multiplication of photon-excited carriers, when they are biased above their breakdown voltage. These avalanches (breakdown events) produce large enough currents that can be registered employing low-power electronic discriminators [9]. APDs can be operated either in free-running mode or in gated mode [10].…”

Section: Introductionmentioning

confidence: 99%

“…Afterpulsing is a complex stochastic self-interacting phenomenon, which is proportional to the incoming light intensity. A number of techniques have been used to study it, including: time interval analysis [47][48][49], double gate method [14,50,51], temporal distribution (background decay) [37,52,53], in-gate effect of afterpulsing [9,10,31], corrections in g (2) (τ) correlation measurements [23,30,54,55], modified double-gate method (in order to study higher-order afterpulsing) [10,56], and other studies of the dependence of afterpulsing on operation settings [11,22].…”

Section: Introductionmentioning

confidence: 99%

Systematic afterpulsing-estimation algorithms for gated avalanche photodiodes

et al. 2016

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We present a method designed to efficiently extract optical signals from InGaAs avalanche photodiodes (APDs) operated in gated mode. In particular, our method permits an estimation of the fraction of counts that actually results from the signal being measured, as opposed to being produced by noise mechanisms, specifically by afterpulsing. Our method in principle allows the use of InGaAs APDs at high detection efficiencies, with the full operation bandwidth, either with or without resorting to the application of a dead-time. As we show below, our method can be used in configurations where afterpulsing exceeds the genuine signal by orders of magnitude, even near saturation. The algorithms that we have developed are suitable to be used either in real-time processing of raw detection probabilities or in post-processing applications, after a calibration step has been performed. The algorithms that we propose here can complement technologies designed for the reduction of afterpulsing.

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A simple method to characterize the afterpulsing effect in single photon avalanche photodiode

Cited by 12 publications

References 12 publications

Comparative study of afterpulsing behavior and models in single photon counting avalanche photo diode detectors

Comparative study of afterpulsing behavior and models in single photon counting avalanche photo diode detectors

Non-Markovian Property of Afterpulsing Effect in Single-Photon Avalanche Detector

Systematic afterpulsing-estimation algorithms for gated avalanche photodiodes

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