2012
DOI: 10.1016/j.solmat.2011.11.031
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A simple and low-cost technique for silicon nanowire arrays based solar cells

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Cited by 83 publications
(52 citation statements)
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“…Several methods have been developed to prepare Si NWAs, such as etching of silicon wafers, [2][3][4] template-assisted or catalyst-assisted growth, 1 lithography techniques, etc. To date the Si nanowire arrays prepared by these methods have all been supported on some dense substrates to maintain the morphology.…”
mentioning
confidence: 99%
“…Several methods have been developed to prepare Si NWAs, such as etching of silicon wafers, [2][3][4] template-assisted or catalyst-assisted growth, 1 lithography techniques, etc. To date the Si nanowire arrays prepared by these methods have all been supported on some dense substrates to maintain the morphology.…”
mentioning
confidence: 99%
“…that the reflectivityon value of SiNWs prepared by wet electroless etching is decreased from 25.6% to 3.1% when the wire length increased from 60nm to 2934nm [22].…”
Section: Optical Reflectancementioning
confidence: 89%
“…For PV application, homogeneously vertically , Hung et al (2012)) or slantingly aligned SiNWs (Fang et al (2008)) permit a uniform phosphorous diffusion and a uniform front contact, leading to efficient collection of electrons. However, a surface structure with disordered orientation of SiNWs as shown in SEM image (b), could increase the recombination of photo-generated carriers, leading to a decrease of the short-circuit current of the PV based device.…”
Section: Effect Of Crystallographic Orientationmentioning
confidence: 99%
“…However, in parallel to the important decrease of R, the density of dangling bonds resulting from the high internal surface engendered by SiNWs is unfortunately significant, causing an important recombination rate of photogenerated carriers Hung et al, 2012;Jung et al, 2010. However, if the surface of SiNWs is passivated with a suitable film, amelioration of the performances of the solar cell, comparing with the solar cell with texturization, is not also achieved as obtained by Kulakci et al (2013) when they deposited Si 3 N 4 on SiNWs.…”
Section: Optimizationmentioning
confidence: 99%