Fabrication and Characterization of Solar Cells Based on Silicon Nanowire Homojunctions

Al-Taay, H.F.; Mahdi, M.A.; Parlevliet, David; Jennings, P.J.

doi:10.1007/s12633-015-9329-0

Cited by 11 publications

(6 citation statements)

References 28 publications

(26 reference statements)

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“…The series resistance ( ) is another parameter that can affect cell performance and high value reduces the output voltage under load, thereby decreasing the FF. Thus should be low because increasing the of a solar cell increases the voltage drop within the solar cell [24]. The value of for all prepared solar cells decreased after heat treatment as shown in Table 1.…”

Section: -Characteristicsmentioning

confidence: 93%

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Fabrication and characterization of nanowalls CdS/dye sensitized solar cells

Abdulelah

Ali

Mahdi

et al. 2017

Physica E: Low-dimensional Systems and Nanostructures

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Dye sensitized solar cells (DSSCs) are fabricated from porous cadmium sulfide (CdS) nanocrystalline thin films. The porous CdS nanostructured thin films are deposited onto FTO/glass substrates by the chemical bath deposition (CBD) method. The surface morphology, crystalline structure, and optical properties of the prepared nanocrystalline thin films are investigated. Rhodamine B, Malachite green, Eosin methylene blue, and Cresyl violet dyes are used to fabricate the DSSC devices. Comparing the absorption spectra of porous CdS nanocrystalline films, all dyes show an absorption peak in the transparent range of CdS thin films indicating that they are suitable for the preparation of DSSCs with CdS. Current-voltage ( -) characteristics show that the solar cell that is fabricated using Malachite green dye shows the highest conversion efficiency of 0.83% while using Rhodamine B dye produces a solar cell with lowest efficiency of 0.38%. However, heat treatment of the fabricated solar cells causes significant enhancement in the output of all devices.

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Section: -Characteristicsmentioning

confidence: 93%

“…In addition the heat treatment could have caused an increase in the crystallinity of dyes that in turn led to an increase in the sc of DSSCs. The power conversion efficiencies of the solar cells were calculated using the relationship [24]:…”

Section: Optical Propertiesmentioning

confidence: 99%

Fabrication and characterization of nanowalls CdS/dye sensitized solar cells

Abdulelah

Ali

Mahdi

et al. 2017

Physica E: Low-dimensional Systems and Nanostructures

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“…where in is the power of the incident light, is the current density at the maximum power point, and is the voltage at the maximum power point. The fill factor (FF) is calculated using the relationship [24]:…”

Section: -Characteristicsmentioning

confidence: 99%

Fabrication and Characterization of Porous CdS/Dye Sensitized Solar Cells

Abdulelah

Ali

Mahdi

et al. 2016

Journal of Solar Energy

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Dye sensitized solar cells (DSSCs) are fabricated from porous cadmium sulfide (CdS) nanocrystalline thin films. The porous CdS nanostructured thin films are deposited onto FTO/glass substrates by the chemical bath deposition (CBD) method. The surface morphology, crystalline structure, and optical properties of the prepared nanocrystalline thin films are investigated. Rhodamine B, Malachite green, Eosin methylene blue, and Cresyl violet dyes are used to fabricate the DSSC devices. Comparing the absorption spectra of porous CdS nanocrystalline films, all dyes show an absorption peak in the transparent range of CdS thin films indicating that they are suitable for the preparation of DSSCs with CdS. Current-voltage (í µí°¼-í µí±) characteristics show that the solar cell that is fabricated using Malachite green dye shows the highest conversion efficiency of 0.83% while using Rhodamine B dye produces a solar cell with lowest efficiency of 0.38%. However, heat treatment of the fabricated solar cells causes significant enhancement in the output of all devices.

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“…In addition, by decreasing the size of the QC SiNS, the photon emission spectrum blue shifts and increases in intensity. Tuning the photon emission of nanosilicon could lead to the development of novel photonic devices [ 1 ] and may pave the way to an all-silicon integrated optoelectronics [ 3 , 4 , 5 ]. Thus, better understanding of the QC effects and charge carrier dynamics in SiNS is essential for the development of nano-silicon based optoelectronic devices.…”

Section: Introductionmentioning

confidence: 99%

Ultrafast Carrier Relaxation Dynamics in Quantum Confined Non-Isotropic Silicon Nanostructures Synthesized by an Inductively Coupled Plasma Process

et al. 2020

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To exploit the optoelectronic properties of silicon nanostructures (SiNS) in real devices, it is fundamental to study the ultrafast processes involving the photogenerated charges separation, migration and lifetime after the optical excitation. Ultrafast time-resolved optical measurements provide such information. In the present paper, we report on the relaxation dynamics of photogenerated charge-carriers in ultrafine SiNS synthesized by means of inductively-coupled-plasma process. The carriers’ transient regime was characterized in high fluence regime by using a tunable pump photon energy and a broadband probe pulse with a photon energy ranging from 1.2 eV to 2.8 eV while varying the energy of the pump photons and their polarization. The SiNS consist of Si nanospheres and nanowires (NW) with a crystalline core embedded in a SiOx outer-shell. The NW inner core presents different typologies: long silicon nanowires (SiNW) characterized by a continuous core (with diameters between 2 nm and 15 nm and up to a few microns long), NW with disconnected fragments of SiNW (each fragment with a length down to a few nanometers), NW with a “chaplet-like” core and NW with core consisting of disconnected spherical Si nanocrystals. Most of these SiNS are asymmetric in shape. Our results reveal a photoabsorption (PA) channel for pump and probe parallel polarizations with a maximum around 2.6 eV, which can be associated to non-isotropic ultra-small SiNS and ascribed either to (i) electron absorption driven by the probe from some intermediate mid-gap states toward some empty state above the bottom of the conduction band or (ii) the Drude-like free-carrier presence induced by the direct-gap transition in the their band structure. Moreover, we pointed up the existence of a broadband and long-living photobleaching (PB) in the 1.2–2.0 eV energy range with a maximum intensity around 1.35 eV which could be associated to some oxygen related defect states present at the Si/SiOx interface. On the other hand, this wide spectral energy PB can be also due to both silicon oxide band-tail recombination and small Si nanostructure excitonic transition.

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Fabrication and Characterization of Solar Cells Based on Silicon Nanowire Homojunctions

Cited by 11 publications

References 28 publications

Fabrication and characterization of nanowalls CdS/dye sensitized solar cells

Fabrication and characterization of nanowalls CdS/dye sensitized solar cells

Fabrication and Characterization of Porous CdS/Dye Sensitized Solar Cells

Ultrafast Carrier Relaxation Dynamics in Quantum Confined Non-Isotropic Silicon Nanostructures Synthesized by an Inductively Coupled Plasma Process

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