A simple and continuous polycrystalline silicon thin-film transistor model for <scp>SPICE</scp> implementation

Pappas, Ilias O.; Hatzopoulos, A.A.; Tassis, D. H.; Arpatzanis, N.; Siskos, S.; Dimitriadis, C. A.; Kamarinos, G.

doi:10.1063/1.2226979

Cited by 15 publications

(7 citation statements)

References 10 publications

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“…Statistical analysis on the fabricated TFT devices was performed, in order to define the threshold-voltage variation from wafer to wafer and over the same wafer. 20 The results have indicated that the threshold-voltage variations have a Gaussian distribution and they can vary up to ±200 mV from their nominal value and from wafer to wafer or over the same wafer.…”

Section: Parameters Extractionmentioning

confidence: 98%

A new threshold‐voltage compensation technique of poly‐Si TFTs for AMOLED display pixel circuits

Pappas¹,

Siskos²,

Dimitriadis³

2010

J Soc Info Display

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Abstract— A new threshold‐voltage compensation technique for polycrystal line‐silicon thin‐film transistors (poly‐Si TFTs) used in active‐matrix organic light‐emitting‐diode (AMOLED) display pixel circuits is presented. The new technique was applied to a conventional 2‐transistor—1‐capacitor (2T1C) pixel circuit, and a new voltage‐programmed pixel circuit (VPPC) is proposed. Theoretically, the proposed pixel is the fastest pixel with threshold‐voltage compensation reported in the literature because of the new compression technique implemented with a static circuit block, which does not affect the response time of the conventional 2T1C pixel circuit. Furthermore, the new pixel exhibits all the other advantages of the 2T1C pixel, such as the simplicity of the peripheral drivers and improves other characteristics, such as its behavior in the temperature variations. The verification of the proposed pixel is made through simulations with HSpice. In order to obtain realistic simulations, device parameters were extracted from fabricated low‐temperature poly‐Si (LTPS) TFTs.

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Section: Parameters Extractionmentioning

confidence: 98%

A new threshold‐voltage compensation technique of poly‐Si TFTs for AMOLED display pixel circuits

Pappas¹,

Siskos²,

Dimitriadis³

2010

J Soc Info Display

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“…For the Monte Carlo analysis, we assumed a Gaussian distribution of the threshold voltage with standard deviation ± 300 mV from its nominal values of 1.3 V. This distribution was designated from statistical analysis of the fabricated poly-Si TFTs [9]. Finally, in the theoretical approach of the proposed converter, we assumed that same type TFTs, closely located on the wafer, share the same electrical characteristics.…”

Section: Monte Carlo Analysismentioning

confidence: 99%

A new linear voltage-to-current converter with threshold voltage compensation for analog circuits applications in polycrystalline silicon TFT process

Pappas

Theodorou

Siskos

et al. 2009

2009 16th IEEE International Conference on Electronics, Circuits and Systems - (ICECS 2009)

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A new linear voltage-to-current (V-I) converter with threshold voltage compensation for analog circuits design implemented with low-temperature polycrystalline silicon thinfilm transistors (LT poly-Si TFTs) is proposed. The proposed V-I converter has been verified through simulations with Synopsys HSpice using level 62 RPI model. In order to obtain realistic simulations, parameters extraction in fabricated LT poly-Si TFTs was made. The proposed V-I converter exhibits high linearity for a wide input range (~ 2 V). Furthermore, the impact of the threshold voltage variation on the output current can be reduced from 38.5 % to 4.5 % under a biasing voltage of 6.5 V and an input voltage of 3 V.

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“…Article number of TFTs of the same technology [13]. The variation of the threshold voltages of these two transistors was considered, because identical value for the threshold voltages is crucial for the functionality of the proposed buffer.…”

Section: Contributedmentioning

confidence: 99%

Comparison of two analog buffers implemented with low‐temperature polysilicon thin‐film transistors for active matrix displays applications

Pappas¹,

Siskos²,

Ghibaudo³

et al. 2008

Phys. Status Solidi (c)

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Designer labels: “In‐drug labeling”, that is, the labeling of the drug instead of the packaging (see figure), would be a major step forward to combat counterfeiting. The digitally encoded microparticles described in this paper can be successfully incorporated in drug tablets and may become a major tool in combating counterfeiters of pharmaceuticals. The microparticles are also shown not to be toxic.

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A simple and continuous polycrystalline silicon thin-film transistor model for SPICE implementation

Cited by 15 publications

References 10 publications

A new threshold‐voltage compensation technique of poly‐Si TFTs for AMOLED display pixel circuits

A new threshold‐voltage compensation technique of poly‐Si TFTs for AMOLED display pixel circuits

A new linear voltage-to-current converter with threshold voltage compensation for analog circuits applications in polycrystalline silicon TFT process

Comparison of two analog buffers implemented with low‐temperature polysilicon thin‐film transistors for active matrix displays applications

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