A silicon sensor for SO2

Kelly, Michael T.; Chun, Jonathan K.M.; Bocarsly, Andrew Bruce

doi:10.1038/382214b0

Cited by 48 publications

(28 citation statements)

References 6 publications

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“…This is the range in which porous etching was previously reported. 19,20,28 At a more positive potential, a current maximum is observed after which the current decreases rapidly to a low value which shows only a weak potential dependence. Such current/potential ͑I-E͒ characteristics, which are typical of electrode passivation due to oxide formation, have not been reported before for n-type GaP.…”

Section: Methodsmentioning

confidence: 99%

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Porous GaP Multilayers Formed by Electrochemical Etching

Tjerkstra

Rivas

Vanmaekelbergh

et al. 2002

Electrochem. Solid-State Lett.

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The properties of porous GaP, formed by anodic etching in H 2 SO 4 , are described. Pore size, pore density, and the interpore distance depend on the dopant density and the potential at which the sample is etched. In addition, it is shown that at high potential, the GaP passivates as a result of the formation of an oxide layer. These features allow us to grow multilayer structures of GaP with modulated porosity and/or oxide layers. The dissolution of oxide at the base of a porous layer can be used to produce freestanding porous membranes.

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Section: Methodsmentioning

confidence: 99%

“…The strong visible luminescence from microporous silicon due to size quantization has found application in sensors. 6,19,20 The emission spectrum of porous silicon is broad and markedly dependent on the method of formation and the history of the sample. Gallium phosphide also has a large refractive index ͑3.2͒.…”

mentioning

confidence: 99%

Porous GaP Multilayers Formed by Electrochemical Etching

Tjerkstra

Rivas

Vanmaekelbergh

et al. 2002

Electrochem. Solid-State Lett.

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show abstract

“…Therefore, various 1D nanomaterials have been synthesized. Of these nanostructures, silicon nanowires (SiNWs) have more attraction because of their unique semiconducting, mechanical and optical properties [6,7]. These properties make them one of leading candidates for use as building blocks to build nanodiodes [8] and biochemical sensors [9].…”

Section: Introductionmentioning

confidence: 99%

Fabrication of large-scale, layer-deposited, low oxygen-content and uniform silicon nanowires

Shao

Ban

et al. 2007

Journal of Crystal Growth

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“…Most of the attention has been focused on porous silicon [1][2][3][4], but increasing interest is being focused on various porous compound semiconductors, including InP, GaAs, and GaP [5][6][7][8][9][10][11][12][13][14].…”

Section: Introductionmentioning

confidence: 99%

“…SEM images for porous GaP anodization in 1 M H 2 SO 4 under different potentials:4 , and (f) cross-section of (e).…”

mentioning

confidence: 99%