Varied morphology of porous GaP(111) formed by anodization

Silicon Porosification: State of the Art

“…3 Subsequently, pores have been found in most if not all single crystalline semiconductors. [4][5][6][7][8][9] However, it is necessary to note that for the first time porous silicon (PSi) was discovered in 1956 by Uhlir, 10 while performing electropolishing experiments on silicon wafers using an HF-containing electrolyte. He found that increasing the current over a certain threshold caused a partial dissolution of the silicon wafer to occur.…”

“…HF temperature (T) effect on the PSi formation rate(8). Anodic reaction was performed by xenon lamp (300 and 500 W) illumination to generate holes in the n-type silicon but without illumination for the p-type silicon.…”

Porous Silicon Characterization and Application: General View

“…In the same time period, the unique features of the material-its large surface area within a small volume, its controllable pore sizes, its convenient surface chemistry, and its compatibility with conventional silicon microfabrication technologies-inspired research into applications far outside optoelectronics. Subsequently, pores have been found in most if not all single crystalline semiconductors (Foll et al 2003a,b;Rittenhouse et al 2003;Fang et al 2006;Santinacci and Djenizian 2008;Shen et al 2008).…”