This paper presents a new method for the generation of cross-scale laser interference patterns and the fabrication of moth-eye structures on silicon. In the method, moth-eye structures were produced on a surface of silicon wafer using direct six-beam laser interference lithography to improve the antireflection performance of the material surface. The periodic dot arrays of the moth-eye structures were formed due to the ablation of the irradiance distribution of interference patterns on the wafer surface. The shape, size, and distribution of the moth-eye structures can be adjusted by controlling the wavelength, incidence angles, and exposure doses in a direct six-beam laser interference lithography setup. The theoretical and experimental results have shown that direct six-beam laser interference lithography can provide a way to fabricate cross-scale moth-eye structures for antireflection applications.

Catalyst-free, selective growth of ZnO nanowires directly on the commonly used dielectric SiO2 layer is of both scientific significance and application importance, yet it is still a challenge. Here, we report a facile method to grow single-crystal ZnO nanowires on a large scale directly on SiO2/Si substrate through vapor-solid mechanism without using any predeposited metal catalyst or seed layer. We found that a rough SiO2/Si substrate surface created by the reactive ion etching is critical for ZnO growth without using catalyst. ZnO nanowire array exclusively grows in area etched by the reactive ion etching method. The advantages of this method include facile and safe roughness-assisted catalyst-free growth of ZnO nanowires on SiO2/Si substrate and the subsequent transfer-free fabrication of electronic or optoelectronic devices. The ZnO nanowire UV photodetector fabricated by a transfer-free process presented high performance in responsivity, quantum efficiency and response speed, even without any post-treatments. The strategy shown here would greatly reduce the complexity in nanodevice fabrication and give an impetus to the application of ZnO nanowires in nanoelectronics and optoelectronics.

Materials with special wettability have drawn considerable attention especially in the practical application for the separation and recovery of the oily wastewater, whereas there still remain challenges of the high-cost materials, significant time, and complicated production equipment. Here, a simple method to fabricate the underwater superoleophobic and underoil superhydrophobic brass mesh via the nanosecond laser ablation is reported for the first time, which provided the micro-/nanoscale hierarchical structures. This mesh is superhydrophilic and superoleophilic in air but superoleophobic under water and superhydrophobic under oil. On the basis of the special wettability of the as-fabricated mesh, we demonstrate a proof of the light or heavy oil/water separation, and the excellent separation efficiencies (>96%) and the superior water/oil breakthrough pressure coupled with the high water/oil flux are achieved. Moreover, the nanosecond laser technique is simple and economical, and it is advisable for the large-area and mass fabrication of the underwater superoleophobic and underoil superhydrophobic mesh in the large-scale oil/water separation.

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