A silicon-based PbSe quantum dot near-infrared photodetector with spectral selectivity

Shi, Yuanlin; Wu, Zhiming; Dong, Xiang; Chen, Pengyu; Wang, Jinquan; Yang, Jun; Xiang, Zihao; Shen, Miao; Zhuang, Yaming; Gou, Jun; Wang, Jun; Jiang, Yadong

doi:10.1039/d1nr02037d

Cited by 21 publications

(14 citation statements)

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“…In 2021, Shi et al reported on a PbS QD/polymethyl methacrylate (PMMA)/PbSe QD Si-based phototransistor, which PbS QDs as the filter layer, and PbSe QDs as the photosensitive layer in contact with the silicon channel, using PMMA to separate the filter layer from the photosensitive layer (Figure 9h). [154] Since QDs can integrate the optical filtering function directly into the photodetector cell, no additional optical filter is required for this type of device (Figure 9i). The spectral response range can be controlled by adjusting the particle size of QDs in the active layer.…”

Section: Phototransistormentioning

confidence: 99%

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Short‐Wave Infrared Photodetectors and Imaging Sensors Based on Lead Chalcogenide Colloidal Quantum Dots

Cai

et al. 2022

Advanced Optical Materials

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Lead chalcogenide quantum dots (QDs) are one of the next generations of ideal narrow bandgap infrared semiconductors, due to their succinct solution processing, low‐cost fabrication, size‐tunable infrared bandgap, and excellent optoelectronic properties. Tremendous efforts including synthesis methods, surface ligand engineering, and device architecture engineering, drastically contribute to the significant improvement of the performance of the photodetectors based on QDs. In recent years, with the rapid development of consumer electronics, short‐wave infrared (SWIR) imaging sensors are in urgent demand. Thanks to the flexible manipulation of the QD thin film deposition process, a variety of QD‐based imaging technologies have been studied, including single‐pixel imaging sensors, integrated imaging sensors with readout circuit, and upconversion imaging sensors, which can effectively reduce the cost of SWIR imaging sensors and promote the commercial application in the consumer electronics. Herein, recent advances of QD‐based photodetectors and imaging sensors are summarized, emphatically focusing on the synthesis of QDs, surface ligand engineering, device architecture engineering, and imaging technology.

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Section: Phototransistormentioning

confidence: 99%

mentioning

confidence: 99%

Short‐Wave Infrared Photodetectors and Imaging Sensors Based on Lead Chalcogenide Colloidal Quantum Dots

Cai

et al. 2022

Advanced Optical Materials

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“…he detection of short-wave infrared (SWIR, 1 − 1.7 𝜇𝑚) wavelengths has significant applications including fiberoptic telecommunication [1], optical gas sensing [2], civilian and military applications [3], biosensors [4], night vision [5], and health monitoring systems [6], [7]. SWIR detection requires high-responsivity photodetectors (PDs) with high speed and low noise.…”

Section: Introductionmentioning

confidence: 99%

Optimal Design and Noise Analysis of High-Performance DBR-Integrated Lateral Germanium (Ge) Photodetectors for SWIR Applications

Kumar

Pandey

Lin

2022

IEEE J. Electron Devices Soc.

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This work presents the high-performance 𝐒𝐢/𝐒𝐢𝐎 𝟐 distributed Bragg reflector (DBR)-integrated lateral germanium (Ge) p-i-n photodetectors (PDs) for atmospheric gas sensing and fiber-optic telecommunication networks in the short-wave infrared (SWIR) regime. In addition, this study also proposes an optoelectronic compact small-signal noise equivalent circuit model (SSNECM) of the designed device to compute the noise performance at the detectors' output. Various figure-of merits including current under dark and illumination, responsivity, detectivity, bandwidth, and the noise of the proposed device are estimated at the room temperature (RT) for an incident optical power of 𝟎. 𝟓 𝝁𝑾. Furthermore, the impact of width and height scaling on dark current, responsivity, and bandwidth are investigated to optimize the proposed device. The validation of the proposed model is done by comparing various parameters including dark current, responsivity, and detectivity of the designed device with other Ge PDs. The estimated results show the reduced trade-off between responsivity and bandwidth of the designed device. At 𝝀 = 𝟏𝟓𝟓𝟎 𝒏𝒎, the proposed device achieves a high detectivity and SNR of > 𝟐 × 𝟏𝟎 𝟏𝟏 Jones and 120 dB (at 3 THz), respectively, with the bias voltage of -2V. These encouraging results pave the path for the future development of low-noise and high-speed detectors.

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“…QDs have gained significant interest in optoelectronic devices such as photodetectors, solar cells, and energy storage devices . PbS QDs have great potential in the field of high-performance PDs due to their low-cost solution synthesis method, high quantum yield, high optical absorption coefficient, and high carrier mobility. − PbS QDs are used in IR PDs due to their tunable band-gap energies and excellent optical properties, but they usually contain toxic elements and are unable to cover the vis band. − Ag 2 S is a direct band-gap semiconductor (0.9–1.1 eV) with a vis–NIR spectral range. It has good chemical stability and optical properties.…”

Section: Introductionmentioning

confidence: 99%

High-Responsivity Vis–NIR Photodetector Based on a Ag₂S/CsPbBr₃ Heterojunction

Wang

Zhang

Song

et al. 2022

ACS Appl. Electron. Mater.

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Quantum dots (QDs) have gained significant interest in optoelectronic devices due to their excellent properties. Single-QD materials limit the high performance of photodetectors (PDs). The performance of PDs is enhanced by combining two dissimilar materials to form a heterostructure. The high responsivity vis−NIR photodetector based on a Ag 2 S/CsPbBr 3 heterojunction is presented in this work. Using CsPbBr 3 QDs as the first absorption layer and Ag 2 S QDs as the second absorption layer, a bipolar carrier transporting channel was built. This layered arrangement can absorb light most effectively. The formation of a heterojunction promoted charge transfer and reduced the recombination of carriers, thus improving the performance of devices. The responsivity (R) is 11.3 A/W, and the specific detectivity (D*) is 3.55 × 10 10 Jones for the Ag 2 S/CsPbBr 3 PD under 405 nm irradiation. Meanwhile, the Ag 2 S/CsPbBr 3 heterojunction can absorb 350−1040 nm light, indicating that the device has a wide spectral detection capability (vis−NIR). The response time of the PD is 31/34 ms under 532 nm irradiation. This work provides a feasible way for high responsivity and zerodimensional heterojunction photodetectors.

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A silicon-based PbSe quantum dot near-infrared photodetector with spectral selectivity

Abstract: Traditional photodetectors usually respond to photons larger than the bandgap of a photosensitive material. In contrast to traditional photodetectors for broad-spectrum detection, the currently reported PbS/PMMA/PbSe CQDs silicon-based photodetectors can...

Cited by 21 publications

References 38 publications

Short‐Wave Infrared Photodetectors and Imaging Sensors Based on Lead Chalcogenide Colloidal Quantum Dots

Short‐Wave Infrared Photodetectors and Imaging Sensors Based on Lead Chalcogenide Colloidal Quantum Dots

Optimal Design and Noise Analysis of High-Performance DBR-Integrated Lateral Germanium (Ge) Photodetectors for SWIR Applications

High-Responsivity Vis–NIR Photodetector Based on a Ag₂S/CsPbBr₃ Heterojunction

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A silicon-based PbSe quantum dot near-infrared photodetector with spectral selectivity

Abstract: Traditional photodetectors usually respond to photons larger than the bandgap of a photosensitive material. In contrast to traditional photodetectors for broad-spectrum detection, the currently reported PbS/PMMA/PbSe CQDs silicon-based photodetectors can...

Cited by 21 publications

References 38 publications

Short‐Wave Infrared Photodetectors and Imaging Sensors Based on Lead Chalcogenide Colloidal Quantum Dots

Short‐Wave Infrared Photodetectors and Imaging Sensors Based on Lead Chalcogenide Colloidal Quantum Dots

Optimal Design and Noise Analysis of High-Performance DBR-Integrated Lateral Germanium (Ge) Photodetectors for SWIR Applications

High-Responsivity Vis–NIR Photodetector Based on a Ag2S/CsPbBr3 Heterojunction

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High-Responsivity Vis–NIR Photodetector Based on a Ag₂S/CsPbBr₃ Heterojunction