Optimal Design and Noise Analysis of High-Performance DBR-Integrated Lateral Germanium (Ge) Photodetectors for SWIR Applications

Kumar, Harshvardhan; Pandey, Ankit Kumar; Lin, Chih‐Hong

doi:10.1109/jeds.2022.3195210

Cited by 11 publications

(10 citation statements)

References 57 publications

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“…On the other hand, the substrate with distributed Bragg reflector structure also can be used to improve the current responsivity up to ∼A/W by enhancing the light absorption of the photodetector. 40…”

Section: Resultsmentioning

confidence: 99%

High-Performance Shortwave Infrared Detector Based on Multilayer Carbon Nanotube Films

Cai

Hong

Wang

et al. 2023

ACS Appl. Mater. Interfaces

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Carbon nanotube (CNT) is an ideal candidate material for shortwave infrared (SWIR) detectors due to its large band gap tunability, strong infrared light absorption, and high mobility. Furthermore, the photodetectors based on CNT can be prepared on any substrate using a low-temperature process, which is conducive to three-dimensional (3D) integration. However, owing to the absorption limitation (<2%) of a single-layer network CNT film with low density, the photodetectors of CNT film show low photocurrent responsivity and detectivity. In this paper, we optimize the thickness of the high-purity semiconducting network CNT films to increase the photocurrent responsivity of the photodetectors. When the thickness of network CNT film is about 5 nm, the responsivity of the zero-bias voltage can reach 32 mA/W at 1800 nm wavelength. Then, using stacked CNT films and contact electrode design, the photodetectors exhibit a maximum responsivity of 120 mA/W at 1800 nm wavelength. The photodetectors with stacked CNT films and local n-type channel doping demonstrated a wide response spectral range of 1200–2100 nm, a peak detectivity of 3.94 × 109 Jones at room temperature, and a linear dynamic range over 118 dB. Moreover, the peak detectivity is over 2.27 × 1011 Jones when the temperature is 180 K. Our work demonstrates the potential of the CNT film for future SWIR imaging at a low cost.

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Section: Resultsmentioning

confidence: 99%

High-Performance Shortwave Infrared Detector Based on Multilayer Carbon Nanotube Films

Cai

Hong

Wang

et al. 2023

ACS Appl. Mater. Interfaces

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“…The photoresponse of the Ge MSM PDs with an interlayer was then described for V = 0.25 V at room temperature in terms of optical responsivity.The optical responsivity ( ) can be calculated using the relation, = I ph /P in = (I tot − I dark )/P in [32], where I ph and P in are the photogenerated current and the power of incident optical signal, respectively. For the proposed device with an a-Si:H interlayer, Fig.…”

Section: B Absorption Coefficient and Responsivity Spectramentioning

confidence: 99%

“…Therefore, high detectivity and low NEP are desired for high-performance PDs. Mathematically, the detectivity and NEP, can be calculated as [27], [32], [34], [35], [36];…”

Section: Analysis Of Detectivity and Nepmentioning

confidence: 99%

“…Furthermore, the transit time of MSM PD can be reduced by minimizing the distance between two electrodes. The RC-limited, transit time-limited, and overall 3dB bandwidths of the PD can be calculated using [27], [32], [33], [34];…”

Section: Frequency Response: 3db Bandwidthmentioning

confidence: 99%

“…c denotes the speed of the free-space light, λ denotes the PD's operating wavelength, and q denotes the charge of an electron. η denotes the PD's external quantum efficiency (η ≤ 1) and it can be calculated as, η = 1240 /λ [32], where, denotes the spectral responsivity. The computed values of energy consumption of PDs expressed in terms of energy/bit (E p ) (E p) for all devices are given in Table V.…”

Section: E Energy Consumption Of Proposed Pdmentioning

confidence: 99%

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High-Performance Lateral Metal-Germanium-Metal SWIR Photodetectors Using a-Si:H Interlayer for Dark Current Reduction

Kumar

Lin

2023

IEEE Photonics J.

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In this work, we propose the lateral metal-germanium-metal photodetectors (PDs) structure on the silicon-oninsulator platform for short-wave infrared (SWIR) applications. The proposed device utilizes the highly n-doped amorphous silicon (a-Si:H) interlayer between metallic contact and low n-doped germanium active region to achieve a low dark current. Additionally, the tuning of Schottky barrier height (SBH) by the selection of various metallic contacts (Cr/W/Mo) has been investigated in order to achieve a large reduction in dark current. With a-Si:H interlayer and Mo metallic contacts at both anode and cathode terminals, the simulated energy band diagram shows that an effective increase in SBH of 0.17 eV and 0.766 eV for electrons and holes, respectively, and thus acts as barriers for electron and hole dark currents. The result shows that the Mo metallic contact device manifests the least dark current (dark current density) of 0.27 pA (0.027 mA/cm 2 ) at V bias of 0.25 V and compared to Cr contact, it has been significantly decreased by two orders of magnitude. In addition, with Mo contact, the proposed device achieves the photogenerated-to-dark current (I ph /I dark ) ratio and the responsivity of ∼ 1.7 × 10 6 and 0.96 A/W, respectively at λ = 1.55 µm with V bias of 0.25 V. Furthermore, the proposed Mo-Ge-Mo PD shows high detectivity (NEP) of 9 × 10 11 cmHz 1/2 W −1 (∼ 3 × 10 −16 WHz −0.5 ), which is nearly 15 (one order lower) times higher than those of Cr-Ge-Cr PD. The results hold great potential for optoelectronic applications requiring low-power Ge-based PD.

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Shortwave Infrared Polarization Imaging and Monolithic Integrated Polarization Amplification Systems Based on Aligned Carbon Nanotube Arrays

Cai,

Wu,

Han

et al. 2023

Adv Funct Materials

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Next‐generation shortwave infrared (SWIR) imaging systems generally require a multidimensional information sensing capability (including intensity, wavelength, polarization, phase, etc.), a highly integrated photodetector unit, and information processing, allowing for miniaturization and low‐cost production. However, traditional polarized SWIR imaging systems with integrated polarizer arrays as supplementary filters and silicon‐based amplifying circuits are complicated and very expensive. Here, a SWIR polarization‐sensitive photodetector and a monolithic integrated polarization amplification system (MIPAS) based on well‐aligned carbon nanotube (CNT) arrays are demonstrated. The polarization‐sensitive CNT photodetector exhibits anisotropic ratios of ≈5.18 and ≈7.56 at 1800 and 2000 nm wavelengths, respectively, and high‐resolution characteristics that can be utilized to image SWIR laser spots with a radius of less than 10 µm. Furthermore, MIPAS including a CNT field‐effect transistor, a CNT loading resistor, and a polarization‐sensitive CNT photodetector is used to increase the anisotropic ratio of the CNT photodetector. The amplified anisotropic ratio is improved up to 173 and 243 at 1800 and 2000 nm wavelengths, respectively, which is the maximum reported in the SWIR band. Our work demonstrates that the CNT polarization‐sensitive photodetector has the potential for SWIR polarization imaging with a monolithic integrated polarization amplification system.

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Optimal Design and Noise Analysis of High-Performance DBR-Integrated Lateral Germanium (Ge) Photodetectors for SWIR Applications

Cited by 11 publications

References 57 publications

High-Performance Shortwave Infrared Detector Based on Multilayer Carbon Nanotube Films

High-Performance Shortwave Infrared Detector Based on Multilayer Carbon Nanotube Films

High-Performance Lateral Metal-Germanium-Metal SWIR Photodetectors Using a-Si:H Interlayer for Dark Current Reduction

Shortwave Infrared Polarization Imaging and Monolithic Integrated Polarization Amplification Systems Based on Aligned Carbon Nanotube Arrays

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