A Silicon-Based Low-Power Broadband Transimpedance Amplifier

Karimi-Bidhendi, Alireza; Mohammadnezhad, Hossein; Green, Michael M.; Heydari, Payam

doi:10.1109/tcsi.2017.2733521

Cited by 15 publications

(13 citation statements)

References 17 publications

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“…Additionally, the chip occupies relatively small area compared with works implemented in SiGe processes. Peaking inductors are employed in [4,5,6,11,17,24,25,26] to extend bandwidth. Apart from that, technologies in [4,5] are faster than that of the proposed work.…”

Section: Resultsmentioning

confidence: 99%

“…Superior performance of SiGe BiCMOS over CMOS makes it possible to design high-speed circuits with high performance, while restrict power consumption to an acceptable level [20]. A couple of chipsets realized in SiGe BiCMOS were published [3,4,5,6,21,22,23,24,25,26]. A low-noise high-gain high-speed optical RX fabricated in 0.13-µm SiGe BiCMOS is proposed.…”

Section: Introductionmentioning

confidence: 99%

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A low-noise 71-dBΩ transimpedance 31-GHz bandwidth optical receiver with automatic gain control in 0.13-µm SiGe BiCMOS

Zhang

Chen

et al. 2019

IEICE Electron. Express

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A low-noise high-gain high-speed optical receiver is fabricated in 0.13-µm SiGe BiCMOS. The transimpedance amplifier incorporating a differential common-base shunt-feedback topology features isolation to input capacitance and high transimpedance limit. Specifically, a comprehensive analytical expression of the input-referred noise current power spectral density of the transimpedance amplifier is derived and investigated, which provides insights for noise optimization. Additionally, the linearity of intermediate stages is improved by a modified variable-gain amplifier operating with automatic gain control. The measured results show a low noise level of 14.5 pA √ Hz, 31-GHz bandwidth, and the maximum 71-dBΩ transimpedance.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

A low-noise 71-dBΩ transimpedance 31-GHz bandwidth optical receiver with automatic gain control in 0.13-µm SiGe BiCMOS

Zhang

Chen

et al. 2019

IEICE Electron. Express

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“…Although [280] had better NF and P dc than [305], its IIP 3 , A V and S 11 were worse. Meanwhile, other BiCMOS designs had higher P dc (11.7 to 95 mW) while some of them even had higher NF or lower A V [163,166,213,237,253,272,279,296,310,320,324,330,336,352].…”

Section: Optimum Work Of the 2010smentioning

confidence: 99%

“…-212, 214-221, 223, 225-236, 238, 240, 242-252, 254, 256-262, 264, 266-268, 270, 271, 273-277, 282, 283, 285-293, 295, 298, 302- 309, 311, 312, 314, 315, 317-319, 321, 322, 325-328, 331-333, 335, 337-341, 346-351, 355-358, 360], the BiCMOS[163,166,213,237,253,272,279,280,296,305,310,320,324,330,336,352] and the HEMT[174, 186, 187, 191, 222, 241, 255, 284, 294, 298-301, 313, 323, 329, 342-345, 353, 359].…”

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confidence: 99%

Ultrawideband LNA 1960–2019: Review

Shahrabadi

2021

IET Circuits, Devices & Syst

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To the best of the author's knowledge, several studies during 1960-2019 were carried out on wideband and ultrawideband LNAs just to render optimum LNAs for SAW-less Radio-Frequency Integrated Circuits (RFICs) but none of these works reviewed and taught the proceedings of these six decades, hence the lack of a comprehensive review is quite noticeable. This article specifically studies the challenges and solutions of designing UWB LNA by reviewing topologies and techniques such as inductive peaking, noise and distortion cancellation, g m -boosting, active inductor and notch filter. Its historical aspect illustrates when the idea of wideband LNA was born and how it changed to ultrawideband LNA, and its tutorial aspect discusses circuits and achievements to present optimum LNAs in Complementary MOS (CMOS), BiCMOS and High-Electron-Mobility Transistor (HEMT) technologies. This work describes the endeavours of engineers in reaching UWB LNA from narrowband LNA during six decades that have great importance as a chapter in understanding this topic because it teaches all topologies, techniques, circuits and related events in a historical narrative for trained readers who are not experts on this topic. | UWB LNA | In the 1960sWhere did the idea of 'transistorised wideband LNA' originate from? It seems that everything goes back to the 1960s when This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.

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“…However, this has led to proportional increase in power consumption and chip area. The broadband characteristics of TIA can be retained by multi-stage design with distributed gain among different stages, but this increased the design complexity, power consumption and chip area [23], [24]. TIA proposed in [24] has demonstrated 3-dB bandwidth of 38.4 GHz, single-ended transimpedance gain of 66 dBΩ, and input-referred noise current density of 14.8 pA/…”

Section: Introductionmentioning

confidence: 99%

Single Stage Low Noise Inductor-Less TIA for RF Over Fiber Communication

Kumar

Saravanan²,

Duraiswamy

et al. 2021

IEEE Access

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This paper presents design, mathematical analysis, and measurement of low noise singlestage transimpedance amplifier (TIA) with scalable bandwidth using 130 nm bipolar complementary metaloxide-semiconductor (BiCMOS) silicon-germanium (SiGe) process. Common-emitter (CE) shunt-shunt feedback topology with active inductor peaking has been used in the design for improving noise, gain and driving capability of TIA by decreasing the input and output impedance, respectively. The use of active inductive peaking in CE shunt-shunt feedback topology has resulted in a new TIA configuration with better performance. The circuit has been optimized for low noise performance by adopting the proposed design technique. Validity of the mathematical analysis and design for the proposed TIA has been established with the help of simulations as well as measurement results. The measurement results of Ku-band TIA (10 MHz to 14 GHz) have demonstrated a transimpedance gain of 53.2 dBΩ, input-referred current noise of 16.8 pA/ √Hz with power consumption of 9.8 mW . The design architecture is adaptable for higher frequency bands, which has been demonstrated by designing another TIA covering K-and Ka-bands (10 MHz to 35 GHz) with transimpedance gain of 33.4 dBΩ, input-referred current noise of 29.4 pA/ √Hz with power consumption of 28.1 mW in the post-layout simulation results, and occupies same chip area as that of 14 GHz, i.e., 0.1 × 0.21 mm 2 INDEX TERMS BiCMOS, CE topology, inductive peaking, low noise, silicon-photonics, TIA

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A Silicon-Based Low-Power Broadband Transimpedance Amplifier

Cited by 15 publications

References 17 publications

A low-noise 71-dBΩ transimpedance 31-GHz bandwidth optical receiver with automatic gain control in 0.13-µm SiGe BiCMOS

A low-noise 71-dBΩ transimpedance 31-GHz bandwidth optical receiver with automatic gain control in 0.13-µm SiGe BiCMOS

Ultrawideband LNA 1960–2019: Review

Single Stage Low Noise Inductor-Less TIA for RF Over Fiber Communication

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