A silicon‐based dual‐material double‐gate tunnel field‐effect transistor with optimized performance

Noor, Samantha Lubaba; Safa, Samia; Khan, Md. Ziaur Rahman

doi:10.1002/jnm.2220

Cited by 13 publications

(5 citation statements)

References 36 publications

(48 reference statements)

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“…Traditional Si-based FETs require the channel thickness to be less than 1/3 of the channel length to effectively avoid short-channel effects. However, due to the limitations of traditional semiconductor materials, the thickness of the channel cannot be continuously reduced [55]. Those 2D materials with abundant valence band structures and readily controllable thicknesses exhibit great potential as next-generation channel materials [56].…”

Section: Working Mechanism In 2d Tribotronic Transistorsmentioning

confidence: 99%

2D tribotronic transistors

Huo

et al. 2022

J. Phys. Energy

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Since the discovery of graphene, 2D materials have been widely applied to field-effect transistors (FETs) due to their great potential in optoelectronics, photodetectors, intelligent sensors, and neuromorphic devices. By integrating 2D transistor with triboelectric nanogenerator (TENG) into tribotronic transistor, the induced triboelectric potential can readily regulate the charge carrier transport characteristics in semiconductor channel. The emerging research field of tribotronics (mainly tribotronic transistors) has gained extensive attentions due to their significant applications on various sensation and human-machine interaction. Here, this review summarizes the recent development of 2D tribotronic transistors. Firstly, the electrical, optoelectronic, and piezoelectric properties of typical 2D materials are introduced. Then, the tribotronic tuning at the micro/nano-scale is raised with the methodologies of thermionic emission, triboelectricity tunneling, and atomic force microscope (AFM) probe scanning, which is of great significance to investigate the underlying mechanism of tribotronic effect. In addition, the macro-scale tribotronic regulation via TENG mechanical displacement are also discussed in detail to explore the applications of 2D tribotronic transistors in intelligent sensors, logic devices, memory devices, and artificial synapses. Finally, the challenges and perspectives for 2D tribotronic transistor are discussed.

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Section: Working Mechanism In 2d Tribotronic Transistorsmentioning

confidence: 99%

2D tribotronic transistors

Huo

et al. 2022

J. Phys. Energy

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“…Where, and are are defined by material dependent Kane parameters, band gap materials and effective electron (or) hole mass. Regional and average electrical fields (Eavg) [28] are indicated in the EF component. Here m0 is the portion of the mass electron and me,mh are the effective mass of electrons and holes.…”

Section: Research Articlementioning

confidence: 99%

3D Analytical Modeling Of Surface Potential And Threshold Voltage Model Of Dm Fintfet With Dual Hetero Gate Oxide Structure

Dharmireddy¹

2021

TURCOMAT

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This paper proposed on basis of a perimeter-weighted-sum method for the construction of a 3D-Analytical Modeling of double metalFin structure TFET with dual hetero gate oxide structure. The DM model device dividing into a symmetrical and asymmetrical dual-gate TFETs, and then resolving 3D architectures. The surface potential and the electrical field (E) achieved by resolving the Poisson 3D equation. The drain current (ID) is eventually calculated using Kane tunneling model to calculate the tunneling generation rate. Threshold voltage model also developed based on the charge inversion model. The performance analysis of dual hetero gate oxide Fin TFET device together with dual dielectric engineering techniques results in enhanced drain current and reduced SCE’s of low leakage current, threshold voltage roll-off and drain induced barrier lowering.

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“…On the one hand, the silicon-based TFETs have low on-current about 3 decades lower than metal-oxide-semiconductor field-effect transistor (MOSFET) that causes their less competitive in high-performance applications ; Sabaghi et al, 2016(b); Dashtbayazi et al, 2015;Das, et al, 2018;Ashita, et al, 2019;Marjani, et al, 2016(b); Marjani, et al, 2016(c)). A number of designs have been proposed to further improve the on-current of the silicon-based TFETs including band-gap engineering (Luisier and Klimeck, 2010;Das, et al, 2015), low band-gap materials (Ganapathi, et al, 2010), high-k dielectric materials ; Jain et al, 2015;Noor, et al, 2017), source-pocket doping (Chang, et al, 2013;; Marjani, et al, 2016(b); Marjani, et al, 2017), vertical direction tunneling (Alper, et al, 2018), and extended source ; Marjani and Hosseini, 2014(b); Marjani, et al, 2017). Another way to overcome this weakness and improve the on-current is replacng silicon with high mobility of III-V material (Marjani, et al, 2016(b); Dorostkar and Marjani, 2018).…”

Section: Introductionmentioning

confidence: 99%

Novel Quantum Structure of an III-V Tunneling Field-Effect Transistor with Source and Channel Heterojunction

Sabaghi

2020

HOLOS

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In this work, an III-V tunneling field-effect transistor (TFET) with source and channel heterojunctions is proposed and introduced. Proposed structure combine the high tunneling efficiency induced by heterojunction material and the high mobility of III-V material. The III-V TFETs based on either source heterojunction and channel heterojunctions have been intensively researched due to their excellent subthreshold-swing characteristics. However, compared with conventional III-V TFETs, the III-V TFETs with source and channel heterojunctions have both shorter tunneling distance and two transmission resonances that significantly improve the on-current. The transfer characteristics affected by gate length were also evaluated. The results show that on-current, off-current, and on-current/off-current ratio and subthreshold-swing of III-V TFETs with source and channel heterojunctions are about 10 -3 A/µm, 10 -13 A/µm, 10 -10 and 30 mV/decade, respectively.

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A silicon‐based dual‐material double‐gate tunnel field‐effect transistor with optimized performance

Cited by 13 publications

References 36 publications

2D tribotronic transistors

2D tribotronic transistors

3D Analytical Modeling Of Surface Potential And Threshold Voltage Model Of Dm Fintfet With Dual Hetero Gate Oxide Structure

Novel Quantum Structure of an III-V Tunneling Field-Effect Transistor with Source and Channel Heterojunction

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