“…On the one hand, the silicon-based TFETs have low on-current about 3 decades lower than metal-oxide-semiconductor field-effect transistor (MOSFET) that causes their less competitive in high-performance applications ; Sabaghi et al, 2016(b); Dashtbayazi et al, 2015;Das, et al, 2018;Ashita, et al, 2019;Marjani, et al, 2016(b); Marjani, et al, 2016(c)). A number of designs have been proposed to further improve the on-current of the silicon-based TFETs including band-gap engineering (Luisier and Klimeck, 2010;Das, et al, 2015), low band-gap materials (Ganapathi, et al, 2010), high-k dielectric materials ; Jain et al, 2015;Noor, et al, 2017), source-pocket doping (Chang, et al, 2013;; Marjani, et al, 2016(b); Marjani, et al, 2017), vertical direction tunneling (Alper, et al, 2018), and extended source ; Marjani and Hosseini, 2014(b); Marjani, et al, 2017). Another way to overcome this weakness and improve the on-current is replacng silicon with high mobility of III-V material (Marjani, et al, 2016(b); Dorostkar and Marjani, 2018).…”