Abstract:In this work, an III-V tunneling field-effect transistor (TFET) with source and channel heterojunctions is proposed and introduced. Proposed structure combine the high tunneling efficiency induced by heterojunction material and the high mobility of III-V material. The III-V TFETs based on either source heterojunction and channel heterojunctions have been intensively researched due to their excellent subthreshold-swing characteristics. However, compared with conventional III-V TFETs, the III-V TFETs with source… Show more
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