Abstract:This paper proposed on basis of a perimeter-weighted-sum method for the construction of a 3D-Analytical Modeling of double metalFin structure TFET with dual hetero gate oxide structure. The DM model device dividing into a symmetrical and asymmetrical dual-gate TFETs, and then resolving 3D architectures. The surface potential and the electrical field (E) achieved by resolving the Poisson 3D equation. The drain current (ID) is eventually calculated using Kane tunneling model to calculate the tunneling generation… Show more
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.