A SiGe-Source Doping-Less Double-Gate Tunnel FET: Design and Analysis Based on Charge Plasma Technique with Enhanced Performance

Mishra, Varun; Verma, Yogesh Kumar; Gupta, Santosh Kumar; Rathi, Vikas K

doi:10.1007/s12633-021-01030-6

Cited by 23 publications

(9 citation statements)

References 27 publications

(20 reference statements)

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“…The usage of SiGe alloy (Si 1-x Ge x ) as source material in TFET has also gained a lot of research interest because of improved synthesis techniques, ease of manufacturing, and bandgap energy control. [24][25][26][27] In this work, we propose a new n-type charge plasma TFET with Si 0.6 Ge 0.4 source pocket (SP-CPTFET) as a hydrogen gas sensor and compared it with the conventional CPTFET. The presence of a lowbandgap SiGe as a pocket in the vicinity of the source/channel interface offers a significant improvement in drain current and provides better sensitivity towards hydrogen gas.…”

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Application of a Charge Plasma Tunnel FET with SiGe Pocket as an Effective Hydrogen Gas Sensor

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2023

ECS J. Solid State Sci. Technol.

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We investigated potential applications of a charge plasma TFET with a source pocket (SP-CPTFET) as a hydrogen gas sensor. The Si0.6Ge0.4 source pocket and HfO2 gate dielectric greatly enhance drain current. The presence of an intrinsic silicon body in the channel and drain controls leakage current. Palladium (Pd) is considered the top and bottom gate catalyst for hydrogen (H2) gas sensing. The flat band voltage and CV properties of the sensor change as a result of the adsorption of H-atoms at the Pd-HfO2 and Pd surfaces. As a result, the gate work-function (ϕ_m) modulates, affecting the drain current. The electrical analysis of the sensor is carried out in terms of transfer characteristics, band energy, current ratio, interband tunneling rate, and electric field. The suggested sensor's drain current sensitivity and current ratio sensitivity are estimated for various H2 pressure concentrations. The investigation has been expanded to include the effect of variation in the H2 gas pressure, germanium mole fraction, temperature, pocket length, interface trap charges (ITC), oxide thickness variation, and comparison of different catalytic metals on the drain current performance. The reported sensor exhibits a much-improved drain current sensitivity and current ratio sensitivity compared to the CPTFET gas sensor.

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Application of a Charge Plasma Tunnel FET with SiGe Pocket as an Effective Hydrogen Gas Sensor

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2023

ECS J. Solid State Sci. Technol.

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“…where T Si is the silicon film thickness and T ox is the oxide thickness. We choose a diameter of 5 nm for our model [13] that provides us with the optimum results discussed in the results and analysis section. Further scrutinizing, we observed that the cylindrical construction leads to a greater density of tangential equipotential lines closer to the source.…”

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confidence: 99%

Design and investigation of doping-less gate-all-around TFET with Mg₂Si source material for low power and enhanced performance applications

et al. 2023

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The MOSFET faces the major problem of being unable to achieve a subthreshold swing (SS) below 60 mV/dec. As device dimensions continue to reduce and the demand for high switching ratios for low power consumption increases, the TFETs (Tunnel Field Effect Transistors) appears to be a viable device, displaying promising characteristic as an answer to the shortcomings of the traditional MOSFETs. So far, TFET designing has been a task of sacrificing higher ON state currents for low subthreshold swing (and vice versa), and a device that displays both while maintaining structural integrity and operational stability lies in the nascent stages of popular research. This work presents a comprehensive analysis of a heterojunction plasma doped gate-all-around TFET (HPD-GAA-TFET) with a comparison between Mg2Si and Si as source material. Charge plasma technique has been employed to induce doping in an intrinsic silicon wafer with the help of suitable electrodes. A low-energy bandgap material, i.e., Magnesium Silicide has been incorporated as source material to form a heterojunction between source and silicon-based channel. A rigorous performance comparison between Si-based GAA-TFET and HPD-GAA-TFET has been drawn with respect to electrical, RF, linearity, and distortion parameters. It is observable that HPD-GAA-TFET outperforms conventional Si-based GAA-TFET presenting an ON-state current (ION), SS, threshold voltage (Vth), and current switching ratio as 0.377 mA, 12.660 mV/dec, 0.214 V, and 2.985×1012,respectively. Moreover, HPD-GAA-TFET holds faster switching in contrast to Si-based device and is also more reliable. Therefore, HPD-GAA-TFET shows suitable candidature for low-power applications.

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“…As the temperature increases, the cut-off frequency decreases due to an increase in gate-gate capacitance and a decrease in g m . RF and analog metrics evaluated to determine device performance are mentioned below from equations (1) to (5) [21,22]: Figure 10 shows the output conductance (g d ) variation with temperature for D4 device. g d is used to determine the driving ability of the device.…”

Section: Rf Analysismentioning

confidence: 99%

Temperature analysis of TG FinFET on electrical, RF and distortion parameters for wireless applications

Ansari,

Jha,

Sharma

et al. 2023

Eng. Res. Express

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This article proposes four Triple Gate (TG) FinFET structures with variations in fin height and fin width with 22 nm gate length on SOI substrate. The four different structures are presented in terms of (fin height, fin width) such as D1(20 nm, 22 nm), D2(10 nm and 20 nm), D3(8 nm and 18 nm), and D4(6 nm and 16 nm). The objective is to investigate the effect of fin dimensions on the DC characteristics of the FinFET structures. Upon analyzing the DC characteristics, it is observed that D1 had an order of leakage current of 10−10 A, while D4 had 10−14 A. Additionally, D1 and D4 exhibited a change in subthreshold swing (SS) of 30%, with D1 having a value of 78.1 mV/decade and D4 having 60.0 mV/decade. The RF metric gate-to-gate capacitance reduced from D1 to D4 by 90%, and the threshold voltage of D4 was found to be 0.342 V. Based on these findings, D4 structure had better optimized results. Furthermore, temperature is varied on the D4 structure from 300 K to 500 K; electrical, RF, and distortion parameters were analyzed thoroughly. It is observed that the RF parameters reduced while the temperature increased, with transconductance frequency product (TFP), gain frequency product (GFP), and cut-off frequency (fT) decreasing by 92.1%, 98.5%, and 92.4%, respectively. However, the distortion parameters slightly increased with an increase in temperature. VIP2, VIP3, gm2, gm3, and IMD3 decreased, indicating that the device performance in wireless applications increases with increasing temperature. Overall, findings suggest that the D4 (6 nm and 16 nm) structure is a promising candidate for wireless applications, especially those that require high-temperature operation.

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A SiGe-Source Doping-Less Double-Gate Tunnel FET: Design and Analysis Based on Charge Plasma Technique with Enhanced Performance

Cited by 23 publications

References 27 publications

Application of a Charge Plasma Tunnel FET with SiGe Pocket as an Effective Hydrogen Gas Sensor

Application of a Charge Plasma Tunnel FET with SiGe Pocket as an Effective Hydrogen Gas Sensor

Design and investigation of doping-less gate-all-around TFET with Mg₂Si source material for low power and enhanced performance applications

Temperature analysis of TG FinFET on electrical, RF and distortion parameters for wireless applications

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A SiGe-Source Doping-Less Double-Gate Tunnel FET: Design and Analysis Based on Charge Plasma Technique with Enhanced Performance

Cited by 23 publications

References 27 publications

Application of a Charge Plasma Tunnel FET with SiGe Pocket as an Effective Hydrogen Gas Sensor

Application of a Charge Plasma Tunnel FET with SiGe Pocket as an Effective Hydrogen Gas Sensor

Design and investigation of doping-less gate-all-around TFET with Mg2Si source material for low power and enhanced performance applications

Temperature analysis of TG FinFET on electrical, RF and distortion parameters for wireless applications

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Design and investigation of doping-less gate-all-around TFET with Mg₂Si source material for low power and enhanced performance applications